FDD8750. Аналоги и основные параметры

Наименование производителя: FDD8750

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 18 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 25 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 2.7 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 12 ns

Cossⓘ - Выходная емкость: 80 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.04 Ohm

Тип корпуса: D-PAK

Аналог (замена) для FDD8750

- подборⓘ MOSFET транзистора по параметрам

 

FDD8750 даташит

 ..1. Size:342K  fairchild semi
 fdd8750.pdf pdf_icon

FDD8750

December 2006 FDD8750 tm N-Channel PowerTrench MOSFET 25V, 2.7A, 40m Features General Description Max rDS(on) = 40m at VGS = 10V, ID = 2.7A This N-Channel MOSFET has been designed specifically to improve the overall effciency of DC/DC converters using either Max rDS(on) = 60m at VGS = 4.5V, ID = 2.7A synchronous or conventional switching PWM controllers.It has Low g

 9.1. Size:308K  fairchild semi
 fdd8796 fdu8796.pdf pdf_icon

FDD8750

March 2006 FDD8796/FDU8796 N-Channel PowerTrench MOSFET 25V, 35A, 5.7m General Description Features Max rDS(on) = 5.7m at VGS = 10V, ID = 35A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 8.0m at VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has be

 9.2. Size:418K  fairchild semi
 fdd8782 fdu8782.pdf pdf_icon

FDD8750

November 2009 FDD8782/FDU8782 N-Channel PowerTrench MOSFET 25V, 35A, 11m General Description Features Max rDS(on) = 11.0m at VGS = 10V, ID = 35A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 14.0m at VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has be

 9.3. Size:310K  fairchild semi
 fdd8770 fdu8770.pdf pdf_icon

FDD8750

March 2006 FDD8770/FDU8770 N-Channel PowerTrench MOSFET 25V, 35A, 4.0m General Description Features Max rDS(on) = 4.0m at VGS = 10V, ID = 35A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 5.5m at VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has bee

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