FDFMA2P857 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDFMA2P857

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.4 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V

|Id|ⓘ - Corriente continua de drenaje: 3 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 11 nS

Cossⓘ - Capacitancia de salida: 80 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.12 Ohm

Encapsulados: MICROFET2X2

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FDFMA2P857 datasheet

 ..1. Size:602K  fairchild semi
 fdfma2p857.pdf pdf_icon

FDFMA2P857

July 2014 FDFMA2P857 Integrated P-Channel PowerTrench MOSFET and Schottky Diode 20V, 3.0A, 120m Features General Description This device is designed specifically as a single package solution MOSFET for the battery charge switch in cellular handset and other ultra- Max rDS(on) = 120m at VGS = 4.5V, ID = 3.0A portable applications. It features a MOSFET with low on-s

 5.1. Size:346K  fairchild semi
 fdfma2p853t.pdf pdf_icon

FDFMA2P857

December 2008 FDFMA2P853T tm Integrated P-Channel PowerTrench MOSFET and Schottky Diode 20 V, 3.0 A, 120 m Features General Description This device is designed specifically as a single package solution MOSFET for the battery charge switch in cellular handset and other Max rDS(on) = 120 m at VGS = 4.5 V, ID = 3.0 A ultra-portable applications. It features a MOS

 5.2. Size:289K  fairchild semi
 fdfma2p859t.pdf pdf_icon

FDFMA2P857

July 2009 FDFMA2P859T Integrated P-Channel PowerTrench MOSFET and Schottky Diode 20 V, 3.0 A, 120 m Features General Description This device is designed specifically as a single package solution MOSFET for the battery charge switch in cellular handset and other Max rDS(on) = 120 m at VGS = 4.5 V, ID = 3.0 A ultra-portable applications. It features a MOSFET with low

 5.3. Size:392K  fairchild semi
 fdfma2p853.pdf pdf_icon

FDFMA2P857

September 2008 July 2014 FDFMA2P853 Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description Features This device is designed specifically as a single package MOSFET solution for the battery charge switch in cellular handset -3.0 A, -20V. RDS(ON) = 120 m @ VGS = -4.5 V and other ultra-portable applications. It features a MOSFET with low on-state resis

MOSTRAR MÁS

Otros transistores... FDFC2P100, FDFC3N108, FDFM2N111, FDFM2P110, FDFMA2N028Z, FDFMA2P029Z, FDFMA2P853, FDFMA2P853T, 12N60, FDFMA2P859T, FDFMA3N109, FDFME2P823ZT, FDFME3N311ZT, FDFMJ2P023Z, FDFS2P102, FDFS2P102A, FDFS2P103