FDFMA2P857 Todos los transistores

 

FDFMA2P857 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDFMA2P857
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.4 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 11 nS
   Cossⓘ - Capacitancia de salida: 80 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.12 Ohm
   Paquete / Cubierta: MICROFET2X2
 

 Búsqueda de reemplazo de FDFMA2P857 MOSFET

   - Selección ⓘ de transistores por parámetros

 

FDFMA2P857 Datasheet (PDF)

 ..1. Size:602K  fairchild semi
 fdfma2p857.pdf pdf_icon

FDFMA2P857

July 2014FDFMA2P857Integrated P-Channel PowerTrench MOSFET and Schottky Diode 20V, 3.0A, 120mFeatures General DescriptionThis device is designed specifically as a single package solution MOSFET:for the battery charge switch in cellular handset and other ultra- Max rDS(on) = 120m at VGS = 4.5V, ID = 3.0Aportable applications. It features a MOSFET with low on-s

 5.1. Size:346K  fairchild semi
 fdfma2p853t.pdf pdf_icon

FDFMA2P857

December 2008FDFMA2P853TtmIntegrated P-Channel PowerTrench MOSFET and Schottky Diode 20 V, 3.0 A, 120 mFeatures General DescriptionThis device is designed specifically as a single package solution MOSFET:for the battery charge switch in cellular handset and other Max rDS(on) = 120 m at VGS = 4.5 V, ID = 3.0 Aultra-portable applications. It features a MOS

 5.2. Size:289K  fairchild semi
 fdfma2p859t.pdf pdf_icon

FDFMA2P857

July 2009FDFMA2P859TIntegrated P-Channel PowerTrench MOSFET and Schottky Diode 20 V, 3.0 A, 120 m Features General DescriptionThis device is designed specifically as a single package solution MOSFET:for the battery charge switch in cellular handset and other Max rDS(on) = 120 m at VGS = 4.5 V, ID = 3.0 Aultra-portable applications. It features a MOSFET with low

 5.3. Size:392K  fairchild semi
 fdfma2p853.pdf pdf_icon

FDFMA2P857

September 2008July 2014FDFMA2P853Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description FeaturesThis device is designed specifically as a single package MOSFET:solution for the battery charge switch in cellular handset -3.0 A, -20V. RDS(ON) = 120 m @ VGS = -4.5 V and other ultra-portable applications. It features a MOSFET with low on-state resis

MOSTRAR MÁS

Otros transistores... FDFC2P100 , FDFC3N108 , FDFM2N111 , FDFM2P110 , FDFMA2N028Z , FDFMA2P029Z , FDFMA2P853 , FDFMA2P853T , 4N60 , FDFMA2P859T , FDFMA3N109 , FDFME2P823ZT , FDFME3N311ZT , FDFMJ2P023Z , FDFS2P102 , FDFS2P102A , FDFS2P103 .

History: 2SK2191 | 2SK4212-ZK | FKP253 | PTF8N65 | BRCS120N03DP | PZ5203QV | HTD2K1P10

 

 
Back to Top

 


 
.