FDFMA2P857 - Даташиты. Аналоги. Основные параметры
Наименование производителя: FDFMA2P857
Тип транзистора: MOSFET
Полярность: P
Pd ⓘ - Максимальная рассеиваемая мощность: 1.4 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 8 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 3 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 11 ns
Cossⓘ - Выходная емкость: 80 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.12 Ohm
Тип корпуса: MICROFET2X2
Аналог (замена) для FDFMA2P857
FDFMA2P857 Datasheet (PDF)
fdfma2p857.pdf

July 2014FDFMA2P857Integrated P-Channel PowerTrench MOSFET and Schottky Diode 20V, 3.0A, 120mFeatures General DescriptionThis device is designed specifically as a single package solution MOSFET:for the battery charge switch in cellular handset and other ultra- Max rDS(on) = 120m at VGS = 4.5V, ID = 3.0Aportable applications. It features a MOSFET with low on-s
fdfma2p853t.pdf

December 2008FDFMA2P853TtmIntegrated P-Channel PowerTrench MOSFET and Schottky Diode 20 V, 3.0 A, 120 mFeatures General DescriptionThis device is designed specifically as a single package solution MOSFET:for the battery charge switch in cellular handset and other Max rDS(on) = 120 m at VGS = 4.5 V, ID = 3.0 Aultra-portable applications. It features a MOS
fdfma2p859t.pdf

July 2009FDFMA2P859TIntegrated P-Channel PowerTrench MOSFET and Schottky Diode 20 V, 3.0 A, 120 m Features General DescriptionThis device is designed specifically as a single package solution MOSFET:for the battery charge switch in cellular handset and other Max rDS(on) = 120 m at VGS = 4.5 V, ID = 3.0 Aultra-portable applications. It features a MOSFET with low
fdfma2p853.pdf

September 2008July 2014FDFMA2P853Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description FeaturesThis device is designed specifically as a single package MOSFET:solution for the battery charge switch in cellular handset -3.0 A, -20V. RDS(ON) = 120 m @ VGS = -4.5 V and other ultra-portable applications. It features a MOSFET with low on-state resis
Другие MOSFET... FDFC2P100 , FDFC3N108 , FDFM2N111 , FDFM2P110 , FDFMA2N028Z , FDFMA2P029Z , FDFMA2P853 , FDFMA2P853T , 4N60 , FDFMA2P859T , FDFMA3N109 , FDFME2P823ZT , FDFME3N311ZT , FDFMJ2P023Z , FDFS2P102 , FDFS2P102A , FDFS2P103 .
History: NTMFS4833NA | HSBB2627
History: NTMFS4833NA | HSBB2627



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