FDFS6N303 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FDFS6N303
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 220 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.035 Ohm
   Paquete / Cubierta: SO-8

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FDFS6N303 Datasheet (PDF)

..1. Size:64K fairchild semi
fdfs6n303.pdf

October 2003 FDFS6N303 N-Channel MOSFET with Schottky Diode General Description FeaturesThe FDFS6N303 incorporates a high cell density MOSFET 6 A, 30 V. RDS(ON) = 0.035 @ VGS = 10 V.and low forward drop (0.35V) Schottky diode into a single R = 0.055 @ VGS = 4.5 V.DS(ON)surface mount power package. The MOSFET and SchottkyVF

8.1. Size:500K fairchild semi
fdfs6n754.pdf

Final DatasheetAugust 2014FDFS6N754Integrated N-Channel PowerTrench MOSFET and Schottky Diode30V, 4A, 56mFeatures General Description Max rDS(on) = 56m at VGS = 0V, ID = 4AThe FDFS6N754 combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very Max rDS(on) = 75m at VGS = 4.5V, ID = 3.5Alow forward voltage drop Schottky barrier re

8.2. Size:617K fairchild semi
fdfs6n548.pdf

August 2014FDFS6N548Integrated N-Channel PowerTrench MOSFET and Schottky Diode30V, 7A, 23mFeatures General Description Max rDS(on) = 23m at VGS = 10V, ID = 7AThe FDFS6N548 combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low Max rDS(on) = 30m at VGS = 4.5V, ID = 6Aforward voltage drop Schottky barrier rectifier in an SO-

8.3. Size:324K onsemi
fdfs6n548.pdf

FDFS6N548Integrated N-ChannelPOWERTRENCH MOSFETand Schottky DiodeDescriptionThe FDFS6N548 combines the exceptional performance ofwww.onsemi.comON Semiconductors PowerTrench MOSFET technology with a verylow forward voltage drop Schottky barrier rectifier in an SO-8 package.This device is designed specifically as a single package solution forDDDC to DC converters. It

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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