FDFS6N303 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDFS6N303

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 12 nS

Cossⓘ - Capacitancia de salida: 220 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.035 Ohm

Encapsulados: SO-8

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FDFS6N303 datasheet

 ..1. Size:64K  fairchild semi
 fdfs6n303.pdf pdf_icon

FDFS6N303

October 2003 FDFS6N303 N-Channel MOSFET with Schottky Diode General Description Features The FDFS6N303 incorporates a high cell density MOSFET 6 A, 30 V. RDS(ON) = 0.035 @ VGS = 10 V. and low forward drop (0.35V) Schottky diode into a single R = 0.055 @ VGS = 4.5 V. DS(ON) surface mount power package. The MOSFET and Schottky VF

 8.1. Size:500K  fairchild semi
 fdfs6n754.pdf pdf_icon

FDFS6N303

Final Datasheet August 2014 FDFS6N754 Integrated N-Channel PowerTrench MOSFET and Schottky Diode 30V, 4A, 56m Features General Description Max rDS(on) = 56m at VGS = 0V, ID = 4A The FDFS6N754 combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very Max rDS(on) = 75m at VGS = 4.5V, ID = 3.5A low forward voltage drop Schottky barrier re

 8.2. Size:617K  fairchild semi
 fdfs6n548.pdf pdf_icon

FDFS6N303

August 2014 FDFS6N548 Integrated N-Channel PowerTrench MOSFET and Schottky Diode 30V, 7A, 23m Features General Description Max rDS(on) = 23m at VGS = 10V, ID = 7A The FDFS6N548 combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low Max rDS(on) = 30m at VGS = 4.5V, ID = 6A forward voltage drop Schottky barrier rectifier in an SO-

 8.3. Size:324K  onsemi
 fdfs6n548.pdf pdf_icon

FDFS6N303

FDFS6N548 Integrated N-Channel POWERTRENCH MOSFET and Schottky Diode Description The FDFS6N548 combines the exceptional performance of www.onsemi.com ON Semiconductor s PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package. This device is designed specifically as a single package solution for D D DC to DC converters. It

MOSTRAR MÁS

Otros transistores... FDFMJ2P023Z, FDFS2P102, FDFS2P102A, FDFS2P103, FDFS2P103A, FDFS2P106A, FDFS2P753AZ, FDFS2P753Z, BS170, FDFS6N548, FDFS6N754, FDG313ND87Z, FDG329N, FDG361N, FDH15N50, FDH27N50, FDH50N50F133