FDFS6N303 Specs and Replacement

Type Designator: FDFS6N303

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 220 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm

Package: SO-8

FDFS6N303 substitution

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FDFS6N303 datasheet

 ..1. Size:64K  fairchild semi
fdfs6n303.pdf pdf_icon

FDFS6N303

October 2003 FDFS6N303 N-Channel MOSFET with Schottky Diode General Description Features The FDFS6N303 incorporates a high cell density MOSFET 6 A, 30 V. RDS(ON) = 0.035 @ VGS = 10 V. and low forward drop (0.35V) Schottky diode into a single R = 0.055 @ VGS = 4.5 V. DS(ON) surface mount power package. The MOSFET and Schottky VF ... See More ⇒

 8.1. Size:500K  fairchild semi
fdfs6n754.pdf pdf_icon

FDFS6N303

Final Datasheet August 2014 FDFS6N754 Integrated N-Channel PowerTrench MOSFET and Schottky Diode 30V, 4A, 56m Features General Description Max rDS(on) = 56m at VGS = 0V, ID = 4A The FDFS6N754 combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very Max rDS(on) = 75m at VGS = 4.5V, ID = 3.5A low forward voltage drop Schottky barrier re... See More ⇒

 8.2. Size:617K  fairchild semi
fdfs6n548.pdf pdf_icon

FDFS6N303

August 2014 FDFS6N548 Integrated N-Channel PowerTrench MOSFET and Schottky Diode 30V, 7A, 23m Features General Description Max rDS(on) = 23m at VGS = 10V, ID = 7A The FDFS6N548 combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low Max rDS(on) = 30m at VGS = 4.5V, ID = 6A forward voltage drop Schottky barrier rectifier in an SO-... See More ⇒

 8.3. Size:324K  onsemi
fdfs6n548.pdf pdf_icon

FDFS6N303

FDFS6N548 Integrated N-Channel POWERTRENCH MOSFET and Schottky Diode Description The FDFS6N548 combines the exceptional performance of www.onsemi.com ON Semiconductor s PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package. This device is designed specifically as a single package solution for D D DC to DC converters. It ... See More ⇒

Detailed specifications: FDFMJ2P023Z, FDFS2P102, FDFS2P102A, FDFS2P103, FDFS2P103A, FDFS2P106A, FDFS2P753AZ, FDFS2P753Z, BS170, FDFS6N548, FDFS6N754, FDG313ND87Z, FDG329N, FDG361N, FDH15N50, FDH27N50, FDH50N50F133

Keywords - FDFS6N303 MOSFET specs

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