FDG313ND87Z MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDG313ND87Z
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.75 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 25 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
|Id|ⓘ - Corriente continua de drenaje: 0.95 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 8.5 nS
Cossⓘ - Capacitancia de salida: 28 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.45 Ohm
Paquete / Cubierta: SC70-6
FDG313ND87Z Datasheet (PDF)
fdg313n d87z.pdf

July 2000FDG313NDigital FET, N-ChannelGeneral Description FeaturesThis N-Channel enhancement mode field effect 0.95 A, 25 V. RDS(on) = 0.45 @ VGS = 4.5 Vtransistor is produced using Fairchild's proprietary, highRDS(on) = 0.60 @ VGS = 2.7 V.cell density, DMOS technology. This very high densityprocess is especially tailored to minimize on-stateresistance. This devic
fdg313n.pdf

July 2000FDG313NDigital FET, N-ChannelGeneral Description FeaturesThis N-Channel enhancement mode field effect 0.95 A, 25 V. RDS(on) = 0.45 @ VGS = 4.5 Vtransistor is produced using Fairchild's proprietary, highRDS(on) = 0.60 @ VGS = 2.7 V.cell density, DMOS technology. This very high densityprocess is especially tailored to minimize on-stateresistance. This devic
fdg315n.pdf

July 2000FDG315NN-Channel Logic Level PowerTrench MOSFETGeneral Description FeaturesThis N-Channel Logic Level MOSFET is produced using 2 A, 30 V. RDS(ON) = 0.12 @ VGS = 10 VFairchild Semiconductor's advanced PowerTrench RDS(ON) = 0.16 @ VGS = 4.5 V.process that has been especially tailored to minimizeon-state resistance and yet maintain super
fdg311n.pdf

February 2000FDG311NN-Channel 2.5V Specified PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET is produced using Fairchild 1.9 A, 20 V. RDS(ON) = 0.115 @ VGS = 4.5 VSemiconductor's advanced PowerTrench process thatRDS(ON) = 0.150 @ VGS = 2.5 V.has been especially tailored to minimize the on-stateresistance and yet maintain lo
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History: STF8N80K5 | IPN60R360PFD7S
History: STF8N80K5 | IPN60R360PFD7S



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