FDG329N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDG329N
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.42 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 1.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 7 nS
Cossⓘ - Capacitancia de salida: 82 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.09 Ohm
Paquete / Cubierta: SC70-6
Búsqueda de reemplazo de FDG329N MOSFET
FDG329N Datasheet (PDF)
fdg329n.pdf

October 2001FDG329N20V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 1.5 A, 20 V. RDS(ON) = 90 m @ VGS = 4.5 V.specifically to improve the overall efficiency of DC/DC RDS(ON) = 115 m @ VGS = 2.5 Vconverters using either synchronous or conventionalswitching PWM controllers. It has been optimized use Fast sw
fdg327n.pdf

October 2001FDG327N20V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 1.5 A, 20 V. RDS(ON) = 90 m @ VGS = 4.5 V.specifically to improve the overall efficiency of DC/DC RDS(ON) = 100 m @ VGS = 2.5 Vconverters using either synchronous or conventionalRDS(ON) = 140 m @ VGS = 1.8 Vswitching PWM controllers. It h
fdg328p.pdf

October 2000FDG328PP-Channel 2.5V Specified PowerTrench MOSFETGeneral Description FeaturesThis P-Channel 2.5V specified MOSFET is produced in 1.5 A, 20 V. RDS(ON) = 0.145 @ VGS = 4.5 Va rugged gate version of Fairchild SemiconductorsRDS(ON) = 0.210 @ VGS = 2.5 Vadvanced PowerTrench process. It has been optimizedfor power management a
fdg327nz.pdf

August 2008 FDG327NZ20V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 1.5 A, 20 V. RDS(ON) = 90 m @ VGS = 4.5 V.specifically to improve the overall efficiency of DC/DC RDS(ON) = 100 m @ VGS = 2.5 Vconverters using either synchronous or conventionalRDS(ON) = 140 m @ VGS = 1.8 Vswitching PWM controllers. It has been
Otros transistores... FDFS2P103A , FDFS2P106A , FDFS2P753AZ , FDFS2P753Z , FDFS6N303 , FDFS6N548 , FDFS6N754 , FDG313ND87Z , 5N65 , FDG361N , FDH15N50 , FDH27N50 , FDH50N50F133 , FDH5500 , FDI025N06 , FDI047AN08A0 , FDI2532 .
History: FMR23N50ES | 2SJ186 | DH060N08F | SI4178DY | UTD408G-TN3-R | IXFT80N08
History: FMR23N50ES | 2SJ186 | DH060N08F | SI4178DY | UTD408G-TN3-R | IXFT80N08



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