FDG329N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FDG329N
   Código: ..29
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 0.42 W
   Voltaje máximo drenador - fuente |Vds|: 20 V
   Voltaje máximo fuente - puerta |Vgs|: 12 V
   Corriente continua de drenaje |Id|: 1.5 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 1.5 V
   Carga de la puerta (Qg): 3.3 nC
   Tiempo de subida (tr): 7 nS
   Conductancia de drenaje-sustrato (Cd): 82 pF
   Resistencia entre drenaje y fuente RDS(on): 0.09 Ohm
   Paquete / Cubierta: SC70-6

Búsqueda de reemplazo de MOSFET FDG329N

FDG329N Datasheet (PDF)

..1. Size:77K fairchild semi
fdg329n.pdf

October 2001FDG329N20V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 1.5 A, 20 V. RDS(ON) = 90 m @ VGS = 4.5 V.specifically to improve the overall efficiency of DC/DC RDS(ON) = 115 m @ VGS = 2.5 Vconverters using either synchronous or conventionalswitching PWM controllers. It has been optimized use Fast sw

9.1. Size:79K fairchild semi
fdg327n.pdf

October 2001FDG327N20V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 1.5 A, 20 V. RDS(ON) = 90 m @ VGS = 4.5 V.specifically to improve the overall efficiency of DC/DC RDS(ON) = 100 m @ VGS = 2.5 Vconverters using either synchronous or conventionalRDS(ON) = 140 m @ VGS = 1.8 Vswitching PWM controllers. It h

9.2. Size:76K fairchild semi
fdg328p.pdf

October 2000FDG328PP-Channel 2.5V Specified PowerTrench MOSFETGeneral Description FeaturesThis P-Channel 2.5V specified MOSFET is produced in 1.5 A, 20 V. RDS(ON) = 0.145 @ VGS = 4.5 Va rugged gate version of Fairchild SemiconductorsRDS(ON) = 0.210 @ VGS = 2.5 Vadvanced PowerTrench process. It has been optimizedfor power management a

9.3. Size:492K fairchild semi
fdg327nz.pdf

August 2008 FDG327NZ20V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 1.5 A, 20 V. RDS(ON) = 90 m @ VGS = 4.5 V.specifically to improve the overall efficiency of DC/DC RDS(ON) = 100 m @ VGS = 2.5 Vconverters using either synchronous or conventionalRDS(ON) = 140 m @ VGS = 1.8 Vswitching PWM controllers. It has been

9.4. Size:69K fairchild semi
fdg326p.pdf

January 2001FDG326PP-Channel 1.8V Specified PowerTrench MOSFETGeneral Description FeaturesThis P-Channel 1.8V specified MOSFET uses 1.5 A, 20 V. RDS(ON) = 140 m @ VGS = 4.5 VFairchilds advanced low voltage PowerTrench process.RDS(ON) = 180 m @ VGS = 2.5 VIt has been optimized for battery power managementRDS(ON) = 250 m @ VGS = 1.

9.5. Size:193K onsemi
fdg327n.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

9.6. Size:78K onsemi
fdg328p.pdf

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