Справочник MOSFET. FDG329N

 

FDG329N MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FDG329N
   Маркировка: ..29
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 0.42 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 1.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 1.5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 3.3 nC
   trⓘ - Время нарастания: 7 ns
   Cossⓘ - Выходная емкость: 82 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.09 Ohm
   Тип корпуса: SC70-6

 Аналог (замена) для FDG329N

 

 

FDG329N Datasheet (PDF)

 ..1. Size:77K  fairchild semi
 fdg329n.pdf

FDG329N FDG329N

October 2001FDG329N20V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 1.5 A, 20 V. RDS(ON) = 90 m @ VGS = 4.5 V.specifically to improve the overall efficiency of DC/DC RDS(ON) = 115 m @ VGS = 2.5 Vconverters using either synchronous or conventionalswitching PWM controllers. It has been optimized use Fast sw

 9.1. Size:79K  fairchild semi
 fdg327n.pdf

FDG329N FDG329N

October 2001FDG327N20V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 1.5 A, 20 V. RDS(ON) = 90 m @ VGS = 4.5 V.specifically to improve the overall efficiency of DC/DC RDS(ON) = 100 m @ VGS = 2.5 Vconverters using either synchronous or conventionalRDS(ON) = 140 m @ VGS = 1.8 Vswitching PWM controllers. It h

 9.2. Size:76K  fairchild semi
 fdg328p.pdf

FDG329N FDG329N

October 2000FDG328PP-Channel 2.5V Specified PowerTrench MOSFETGeneral Description FeaturesThis P-Channel 2.5V specified MOSFET is produced in 1.5 A, 20 V. RDS(ON) = 0.145 @ VGS = 4.5 Va rugged gate version of Fairchild SemiconductorsRDS(ON) = 0.210 @ VGS = 2.5 Vadvanced PowerTrench process. It has been optimizedfor power management a

 9.3. Size:492K  fairchild semi
 fdg327nz.pdf

FDG329N FDG329N

August 2008 FDG327NZ20V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 1.5 A, 20 V. RDS(ON) = 90 m @ VGS = 4.5 V.specifically to improve the overall efficiency of DC/DC RDS(ON) = 100 m @ VGS = 2.5 Vconverters using either synchronous or conventionalRDS(ON) = 140 m @ VGS = 1.8 Vswitching PWM controllers. It has been

 9.4. Size:69K  fairchild semi
 fdg326p.pdf

FDG329N FDG329N

January 2001FDG326PP-Channel 1.8V Specified PowerTrench MOSFETGeneral Description FeaturesThis P-Channel 1.8V specified MOSFET uses 1.5 A, 20 V. RDS(ON) = 140 m @ VGS = 4.5 VFairchilds advanced low voltage PowerTrench process.RDS(ON) = 180 m @ VGS = 2.5 VIt has been optimized for battery power managementRDS(ON) = 250 m @ VGS = 1.

 9.5. Size:193K  onsemi
 fdg327n.pdf

FDG329N FDG329N

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.6. Size:78K  onsemi
 fdg328p.pdf

FDG329N FDG329N

October 2000FDG328PP-Channel 2.5V Specified PowerTrench MOSFETGeneral Description FeaturesThis P-Channel 2.5V specified MOSFET is produced in 1.5 A, 20 V. RDS(ON) = 0.145 @ VGS = 4.5 Va rugged gate version of Fairchild SemiconductorsRDS(ON) = 0.210 @ VGS = 2.5 Vadvanced PowerTrench process. It has been optimizedfor power management a

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History: FDMA905P

 

 
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