FDH5500 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDH5500
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 375 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 55 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 75 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 102 nS
Cossⓘ - Capacitancia de salida: 1310 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.007 Ohm
Encapsulados: TO-247
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FDH5500 datasheet
fdh5500.pdf
June 2008 FDH5500 N-Channel UltraFET Power MOSFET 55V, 75A, 7m Applications Features Typ rDS(on) = 5.2m at VGS = 10V, ID = 75A DC Linear Mode Control Typ Qg(10) = 118nC at VGS = 10V Solenoid and Motor Control Simulation Models Switching Regulators -Temperature Compensated PSPICE and SABERTM Automotive Systems Models Peak Current vs Pulse Width Curve UIS Rating C
fdh5500 f085.pdf
October 2008 FDH5500_F085 N-Channel UltraFET Power MOSFET 55V, 75A, 7m Applications Features Typ rDS(on) = 5.2m at VGS = 10V, ID = 75A DC Linear Mode Control Typ Qg(10) = 118nC at VGS = 10V Solenoid and Motor Control Simulation Models Switching Regulators -Temperature Compensated PSPICE and SABERTM Automotive Systems Models Peak Current vs Pulse Width Curve UIS Rat
fdh5500.pdf
isc N-Channel MOSFET Transistor FDH5500 FEATURES Drain Current I = 75A@ T =25 D C Drain Source Voltage- V =55V(Min) DSS Static Drain-Source On-Resistance R = 7m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose a
Otros transistores... FDFS6N548, FDFS6N754, FDG313ND87Z, FDG329N, FDG361N, FDH15N50, FDH27N50, FDH50N50F133, AO3407, FDI025N06, FDI047AN08A0, FDI2532, FDI33N25, FDI3652, FDI8442, FDJ127P, FDJ128N
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