FDH5500 Datasheet and Replacement
Type Designator: FDH5500
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 375 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 75 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 102 nS
Cossⓘ - Output Capacitance: 1310 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
Package: TO-247
FDH5500 substitution
FDH5500 Datasheet (PDF)
fdh5500.pdf

June 2008FDH5500N-Channel UltraFET Power MOSFET55V, 75A, 7m Applications Features Typ rDS(on) = 5.2m at VGS = 10V, ID = 75A DC Linear Mode Control Typ Qg(10) = 118nC at VGS = 10V Solenoid and Motor Control Simulation Models Switching Regulators -Temperature Compensated PSPICE and SABERTM Automotive SystemsModels Peak Current vs Pulse Width Curve UIS Rating C
fdh5500 f085.pdf

October 2008FDH5500_F085N-Channel UltraFET Power MOSFET55V, 75A, 7m ApplicationsFeatures Typ rDS(on) = 5.2m at VGS = 10V, ID = 75A DC Linear Mode Control Typ Qg(10) = 118nC at VGS = 10V Solenoid and Motor Control Simulation Models Switching Regulators -Temperature Compensated PSPICE and SABERTM Automotive SystemsModels Peak Current vs Pulse Width Curve UIS Rat
fdh5500.pdf

isc N-Channel MOSFET Transistor FDH5500FEATURESDrain Current I = 75A@ T =25D CDrain Source Voltage-: V =55V(Min)DSSStatic Drain-Source On-Resistance: R = 7m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a
Datasheet: FDFS6N548 , FDFS6N754 , FDG313ND87Z , FDG329N , FDG361N , FDH15N50 , FDH27N50 , FDH50N50F133 , 7N60 , FDI025N06 , FDI047AN08A0 , FDI2532 , FDI33N25 , FDI3652 , FDI8442 , FDJ127P , FDJ128N .
History: IRF820ASPBF | RFP5P12 | HGP020NE4S | IRFY430CM
Keywords - FDH5500 MOSFET datasheet
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History: IRF820ASPBF | RFP5P12 | HGP020NE4S | IRFY430CM



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