FDI33N25 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDI33N25
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 235 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 250 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 33 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 230 nS
Cossⓘ - Capacitancia de salida: 330 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.094 Ohm
Encapsulados: I2-PAK
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FDI33N25 datasheet
fdi33n25.pdf
May 2006 TM UniFET FDB33N25 / FDI33N25 250V N-Channel MOSFET Features Description 33A, 250V, RDS(on) = 0.094 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 36.8 nC) stripe, DMOS technology. Low Crss ( typical 39 pF) This advanced technology has been especially
fdb33n25 fdi33n25.pdf
May 2006 TM UniFET FDB33N25 / FDI33N25 250V N-Channel MOSFET Features Description 33A, 250V, RDS(on) = 0.094 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 36.8 nC) stripe, DMOS technology. Low Crss ( typical 39 pF) This advanced technology has been especially
fdi33n25.pdf
isc N-Channel MOSFET Transistor FDI33N25 FEATURES Drain Current I = 33A@ T =25 D C Drain Source Voltage- V =250V(Min) DSS Static Drain-Source On-Resistance R = 94m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power su pplies and general purpo
Otros transistores... FDG361N, FDH15N50, FDH27N50, FDH50N50F133, FDH5500, FDI025N06, FDI047AN08A0, FDI2532, IRF2807, FDI3652, FDI8442, FDJ127P, FDJ128N, FDJ128NF077, FDJ129P, FDM100-0045SP, FDM21-05QC
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