FDI33N25 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDI33N25
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 235 W
Voltaje máximo drenador - fuente |Vds|: 250 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 33 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 5 V
Carga de la puerta (Qg): 36.8 nC
Tiempo de subida (tr): 230 nS
Conductancia de drenaje-sustrato (Cd): 330 pF
Resistencia entre drenaje y fuente RDS(on): 0.094 Ohm
Paquete / Cubierta: I2-PAK
Búsqueda de reemplazo de MOSFET FDI33N25
FDI33N25 Datasheet (PDF)
fdi33n25.pdf
May 2006 TMUniFETFDB33N25 / FDI33N25250V N-Channel MOSFETFeatures Description 33A, 250V, RDS(on) = 0.094 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 36.8 nC)stripe, DMOS technology. Low Crss ( typical 39 pF)This advanced technology has been especially
fdb33n25 fdi33n25.pdf
May 2006 TMUniFETFDB33N25 / FDI33N25250V N-Channel MOSFETFeatures Description 33A, 250V, RDS(on) = 0.094 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 36.8 nC)stripe, DMOS technology. Low Crss ( typical 39 pF)This advanced technology has been especially
fdi33n25.pdf
isc N-Channel MOSFET Transistor FDI33N25FEATURESDrain Current I = 33A@ T =25D CDrain Source Voltage-: V =250V(Min)DSSStatic Drain-Source On-Resistance: R = 94m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power su pplies and generalpurpo
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