FDI33N25 MOSFET. Datasheet pdf. Equivalent
Type Designator: FDI33N25
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 235 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 33 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 36.8 nC
trⓘ - Rise Time: 230 nS
Cossⓘ - Output Capacitance: 330 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.094 Ohm
Package: I2-PAK
FDI33N25 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDI33N25 Datasheet (PDF)
fdi33n25.pdf
May 2006 TMUniFETFDB33N25 / FDI33N25250V N-Channel MOSFETFeatures Description 33A, 250V, RDS(on) = 0.094 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 36.8 nC)stripe, DMOS technology. Low Crss ( typical 39 pF)This advanced technology has been especially
fdb33n25 fdi33n25.pdf
May 2006 TMUniFETFDB33N25 / FDI33N25250V N-Channel MOSFETFeatures Description 33A, 250V, RDS(on) = 0.094 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 36.8 nC)stripe, DMOS technology. Low Crss ( typical 39 pF)This advanced technology has been especially
fdi33n25.pdf
isc N-Channel MOSFET Transistor FDI33N25FEATURESDrain Current I = 33A@ T =25D CDrain Source Voltage-: V =250V(Min)DSSStatic Drain-Source On-Resistance: R = 94m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power su pplies and generalpurpo
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