FDI33N25 Datasheet and Replacement

May 2006 TMUniFETFDB33N25 / FDI33N25250V N-Channel MOSFETFeatures Description 33A, 250V, RDS(on) = 0.094 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 36.8 nC)stripe, DMOS technology. Low Crss ( typical 39 pF)This advanced technology has been especially

May 2006 TMUniFETFDB33N25 / FDI33N25250V N-Channel MOSFETFeatures Description 33A, 250V, RDS(on) = 0.094 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 36.8 nC)stripe, DMOS technology. Low Crss ( typical 39 pF)This advanced technology has been especially

isc N-Channel MOSFET Transistor FDI33N25FEATURESDrain Current I = 33A@ T =25D CDrain Source Voltage-: V =250V(Min)DSSStatic Drain-Source On-Resistance: R = 94m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power su pplies and generalpurpo