FDI33N25 MOSFET Datasheet: N-Ch, 250V, 33A. Full specification with pinout and replacement list

FDI33N25 Specs and Replacement

   Type Designator: FDI33N25
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 235 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 33 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 230 nS
   Cossⓘ - Output Capacitance: 330 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.094 Ohm
   Package: I2-PAK

FDI33N25 substitution

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FDI33N25 datasheet

..1. Size:885K fairchild semi
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May 2006 TM UniFET FDB33N25 / FDI33N25 250V N-Channel MOSFET Features Description 33A, 250V, RDS(on) = 0.094 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 36.8 nC) stripe, DMOS technology. Low Crss ( typical 39 pF) This advanced technology has been especially ... See More ⇒

..2. Size:916K fairchild semi
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..3. Size:281K inchange semiconductor
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isc N-Channel MOSFET Transistor FDI33N25 FEATURES Drain Current I = 33A@ T =25 D C Drain Source Voltage- V =250V(Min) DSS Static Drain-Source On-Resistance R = 94m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power su pplies and general purpo... See More ⇒

Detailed specifications: FDG361N , FDH15N50 , FDH27N50 , FDH50N50F133 , FDH5500 , FDI025N06 , FDI047AN08A0 , FDI2532 , IRF2807 , FDI3652 , FDI8442 , FDJ127P , FDJ128N , FDJ128NF077 , FDJ129P , FDM100-0045SP , FDM21-05QC .