FDJ129P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDJ129P
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.6 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 4.2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 9 nS
Cossⓘ - Capacitancia de salida: 124 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.07 Ohm
Paquete / Cubierta: SC75-6FLMP
Búsqueda de reemplazo de FDJ129P MOSFET
FDJ129P Datasheet (PDF)
fdj129p.pdf

November 2007tmFDJ129P P-Channel -2.5 Vgs Specified PowerTrench MOSFET General Description Features This P-Channel -2.5V specified MOSFET uses 4.2 A, 20 V. RDS(ON) = 70 m @ VGS = 4.5 V Fairchilds advanced low voltage PowerTrench process. RDS(ON) = 120 m @ VGS = 2.5 V It has been optimized for battery power management applications. Low gate ch
fdj127p.pdf

July 2004 FDJ127P P-Channel -1.8 Vgs Specified PowerTrench MOSFET General Description Features This P-Channel -1.8V specified MOSFET uses 4.1 A, 20 V. RDS(ON) = 60 m @ VGS = 4.5 V Fairchilds advanced low voltage Power TrenchRDS(ON) = 85 m @ VGS = 2.5 V process. It has been optimized for battery power RDS(ON) = 133 m @ VGS = 1.8 V management
fdj128n fdj128n f077.pdf

August 2004 FDJ128N N-Channel 2.5 Vgs Specified PowerTrench MOSFET General Description Features This N-Channel -2.5V specified MOSFET uses 5.5 A, 20 V. RDS(ON) = 35 m @ VGS = 4.5 V Fairchilds advanced low voltage PowerTrench process. RDS(ON) = 51 m @ VGS = 2.5 V It has been optimized for battery power management applications. Low gate charge Application
Otros transistores... FDI047AN08A0 , FDI2532 , FDI33N25 , FDI3652 , FDI8442 , FDJ127P , FDJ128N , FDJ128NF077 , K2611 , FDM100-0045SP , FDM21-05QC , FDM606P , FDM6296 , FDMA1430JP , FDMA6676PZ , FDMA86108LZ , FDMA86251 .
History: 6N60KG-TND-R
History: 6N60KG-TND-R



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