FDMA1430JP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

July 2014FDMA1430JPIntegrated P-Channel PowerTrench MOSFET and BJT -30 V, -2.9 A, 90 mFeatures General DescriptionThis device is designed specifically as a single package solution Max rDS(on) = 90 m at VGS = -4.5 V, ID = -2.9 Afor loadswitching in cellular handset and other ultra-portable Max rDS(on) = 130 m at VGS = -2.5 V, ID = -2.6 Aapplications. It features a 50

tOctober 2010tmFDMA1028NZDual N-Channel PowerTrench MOSFETGeneral Description Features 3.7 A, 20V. RDS(ON) = 68 m @ VGS = 4.5V This device is designed specifically as a single package RDS(ON) = 86 m @ VGS = 2.5V solution for dual switching requirements in cellular Low profile 0.8 mm maximum in the new package handset and other ultra-portable

May 2010FDMA1024NZDual N-Channel PowerTrench MOSFET 20 V, 5.0 A, 54 mFeatures General Description Max rDS(on) = 54 m at VGS = 4.5 V, ID = 5.0 AThis device is designed specifically as a single package solution for dual switching requirements in cellular handset and other Max rDS(on) = 66 m at VGS = 2.5 V, ID = 4.2 Aultra-portable applications. It features two indepe

May 2010FDMA1032CZtm20V Complementary PowerTrench MOSFET General Description Features Q1: N-Channel This device is designed specifically as a single package 3.7 A, 20V. RDS(ON) = 68 m @ VGS = 4.5V solution for a DC/DC 'Switching' MOSFET in cellular RDS(ON) = 86 m @ VGS = 2.5V handset and other ultra-portable applications. It Q2: P-Channel features a

May 2009FDMA1023PZtmDual P-Channel PowerTrench MOSFET20V, 3.7A, 72mFeatures General Description Max rDS(on) = 72m at VGS = 4.5V, ID = 3.7AThis device is designed specifically as a single package solution for the battery charge switch in cellular handset Max rDS(on) = 95m at VGS = 2.5V, ID = 3.2Aand other ultra-portable applications. It features

May 2009FDMA1027PTDual P-Channel PowerTrench MOSFET20 V, 3 A, 120 mFeatures General DescriptionThis device is designed specifically as a single package solution Max rDS(on) = 120 m at VGS = -4.5 V, ID = -3.0 Afor the battery charge switch in cellular handset and other Max rDS(on) = 160 m at VGS = -2.5 V, ID = -2.5 Aultra-portable applications. It features tw

May 20 FDMA1025PtmDual P-Channel PowerTrench MOSFET 20V, 3.1A, 155mFeatures General Description Max rDS(on) = 155m at VGS = 4.5V, ID = 3.1AThis device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra - Max rDS(on) = 220m at VGS = 2.5V, ID = 2.3Aportable applications. It feat

May 2009tmtmFDMA1029PZ Dual P-Channel PowerTrench MOSFET General Description Features This device is designed specifically as a single package 3.1 A, 20V. RDS(ON) = 95 m @ VGS = 4.5V solution for the battery charge switch in cellular handset RDS(ON) = 141 m @ VGS = 2.5V and other ultra-portable applications. It features two Low profile 0.8 mm maximu

July 2014FDMA1027PDual P-Channel PowerTrench MOSFET General Description FeaturesThis device is designed specifically as a single package -3.0 A, -20V. RDS(ON) = 120 m @ VGS = -4.5 V solution for the battery charge switch in cellular handset and other ultra-portable applications. It features two RDS(ON) = 160 m @ VGS = -2.5 Vindependent P-Channel MOSFETs with low on-state

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

May 2006 FDMA1029PZ Dual P-Channel PowerTrench MOSFET General Description Features This device is designed specifically as a single package 3.1 A, 20V. RDS(ON) = 95 m @ VGS = 4.5V solution for the battery charge switch in cellular handset RDS(ON) = 141 m @ VGS = 2.5V and other ultra-portable applications. It features two Low profile 0.8 mm maxi