FDMA1430JP. Аналоги и основные параметры
Наименование производителя: FDMA1430JP
Тип транзистора: MOSFET
Полярность: P
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 1.5 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 8 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 2.9 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 4.4 ns
Cossⓘ - Выходная емкость: 47 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.09 Ohm
Тип корпуса: MICROFET2X2
Аналог (замена) для FDMA1430JP
- подборⓘ MOSFET транзистора по параметрам
FDMA1430JP даташит
fdma1430jp.pdf
July 2014 FDMA1430JP Integrated P-Channel PowerTrench MOSFET and BJT -30 V, -2.9 A, 90 m Features General Description This device is designed specifically as a single package solution Max rDS(on) = 90 m at VGS = -4.5 V, ID = -2.9 A for loadswitching in cellular handset and other ultra-portable Max rDS(on) = 130 m at VGS = -2.5 V, ID = -2.6 A applications. It features a 50
fdma1028nz.pdf
t October 2010 tm FDMA1028NZ Dual N-Channel PowerTrench MOSFET General Description Features 3.7 A, 20V. RDS(ON) = 68 m @ VGS = 4.5V This device is designed specifically as a single package RDS(ON) = 86 m @ VGS = 2.5V solution for dual switching requirements in cellular Low profile 0.8 mm maximum in the new package handset and other ultra-portable
fdma1024nz.pdf
May 2010 FDMA1024NZ Dual N-Channel PowerTrench MOSFET 20 V, 5.0 A, 54 m Features General Description Max rDS(on) = 54 m at VGS = 4.5 V, ID = 5.0 A This device is designed specifically as a single package solution for dual switching requirements in cellular handset and other Max rDS(on) = 66 m at VGS = 2.5 V, ID = 4.2 A ultra-portable applications. It features two indepe
fdma1032cz.pdf
May 2010 FDMA1032CZ tm 20V Complementary PowerTrench MOSFET General Description Features Q1 N-Channel This device is designed specifically as a single package 3.7 A, 20V. RDS(ON) = 68 m @ VGS = 4.5V solution for a DC/DC 'Switching' MOSFET in cellular RDS(ON) = 86 m @ VGS = 2.5V handset and other ultra-portable applications. It Q2 P-Channel features a
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