FDMC6688P MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDMC6688P

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 30 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V

|Id|ⓘ - Corriente continua de drenaje: 56 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 33 nS

Cossⓘ - Capacitancia de salida: 678 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0065 Ohm

Encapsulados: POWER33

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FDMC6688P datasheet

 ..1. Size:433K  fairchild semi
 fdmc6688p.pdf pdf_icon

FDMC6688P

February 2015 FDMC6688P P-Channel PowerTrench MOSFET -20 V, -56 A, 6.5 m Features General Description Max rDS(on) = 6.5 m at VGS = -4.5 V, ID = -14 A This P-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that has Max rDS(on) = 9.8 m at VGS = -2.5 V, ID = -11 A been optimized for rDS(ON), switching performance and Max rDS(on) =

 7.1. Size:253K  fairchild semi
 fdmc6686p.pdf pdf_icon

FDMC6688P

February 2015 FDMC6686P P-Channel PowerTrench MOSFET -20 V, -56 A, 4 m Features General Description Max rDS(on) = 4 m at VGS = -4.5 V, ID = -18 A This P-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that has Max rDS(on) = 5.7 m at VGS = -2.5 V, ID = -16 A been optimized for rDS(ON), switching performance and Max rDS(on) =11.5

 7.2. Size:327K  onsemi
 fdmc6686p.pdf pdf_icon

FDMC6688P

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.1. Size:299K  fairchild semi
 fdmc6679az.pdf pdf_icon

FDMC6688P

July 2009 FDMC6679AZ P-Channel PowerTrench MOSFET -30 V, -20 A, 10 m Features General Description The FDMC6679AZ has been designed to minimize losses in Max rDS(on) = 10 m at VGS = -10 V, ID = -11.5 A load switch applications. Advancements in both silicon and Max rDS(on) = 18 m at VGS = -4.5 V, ID = -8.5 A package technologies have been combined to offer the lowest rD

MOSTRAR MÁS

Otros transistores... FDM21-05QC, FDM606P, FDM6296, FDMA1430JP, FDMA6676PZ, FDMA86108LZ, FDMA86251, FDMB506P, IRF9640, FDMC8010ET30, FDMC86160ET100, FDMC86260ET150, FDMC86262P, FDMC86340ET80, FDMC86570LET60, FDMC8676, FDMC8678S