All MOSFET. FDMC6688P Datasheet

 

FDMC6688P MOSFET. Datasheet pdf. Equivalent

Type Designator: FDMC6688P

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 30 W

Maximum Drain-Source Voltage |Vds|: 20 V

Maximum Gate-Source Voltage |Vgs|: 8 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 1 V

Maximum Drain Current |Id|: 56 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 33 nS

Drain-Source Capacitance (Cd): 678 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0065 Ohm

Package: Power33

FDMC6688P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDMC6688P Datasheet (PDF)

1.1. fdmc6688p.pdf Size:433K _upd-mosfet

FDMC6688P
FDMC6688P

February 2015 FDMC6688P P-Channel PowerTrench® MOSFET -20 V, -56 A, 6.5 mΩ Features General Description Max rDS(on) = 6.5 mΩ at VGS = -4.5 V, ID = -14 A This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has Max rDS(on) = 9.8 mΩ at VGS = -2.5 V, ID = -11 A been optimized for rDS(ON), switching performance and Max rDS(on) =

3.1. fdmc6686p.pdf Size:253K _fairchild_semi

FDMC6688P
FDMC6688P

February 2015 FDMC6686P P-Channel PowerTrench® MOSFET -20 V, -56 A, 4 mΩ Features General Description Max rDS(on) = 4 mΩ at VGS = -4.5 V, ID = -18 A This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has Max rDS(on) = 5.7 mΩ at VGS = -2.5 V, ID = -16 A been optimized for rDS(ON), switching performance and Max rDS(on) =11.5

 4.1. fdmc6675bz.pdf Size:327K _fairchild_semi

FDMC6688P
FDMC6688P

September 2010 FDMC6675BZ P-Channel Power Trench MOSFET -30 V, -20 A, 14.4 m Features General Description Max rDS(on) = 14.4 m at VGS = -10 V, ID = -9.5 A The FDMC6675BZ has been designed to minimize losses in load switch applications. Advancements in both silicon and Max rDS(on) = 27.0 m at VGS = -4.5 V, ID = -6.9 A package technologies have been combined to offer the lowest H

4.2. fdmc6679az.pdf Size:299K _fairchild_semi

FDMC6688P
FDMC6688P

July 2009 FDMC6679AZ P-Channel PowerTrench MOSFET -30 V, -20 A, 10 m? Features General Description The FDMC6679AZ has been designed to minimize losses in Max rDS(on) = 10 m? at VGS = -10 V, ID = -11.5 A load switch applications. Advancements in both silicon and Max rDS(on) = 18 m? at VGS = -4.5 V, ID = -8.5 A package technologies have been combined to offer the lowest rDS(on) and

Datasheet: FDM21-05QC , FDM606P , FDM6296 , FDMA1430JP , FDMA6676PZ , FDMA86108LZ , FDMA86251 , FDMB506P , 2N5485 , FDMC8010ET30 , FDMC86160ET100 , FDMC86260ET150 , FDMC86262P , FDMC86340ET80 , FDMC86570LET60 , FDMC8676 , FDMC8678S .

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