IRFPE40 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFPE40
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 150 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 800 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 5.4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 36 nS
Cossⓘ - Capacitancia de salida: 470 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2 Ohm
Encapsulados: TO247AC
Búsqueda de reemplazo de IRFPE40 MOSFET
- Selecciónⓘ de transistores por parámetros
IRFPE40 datasheet
..1. Size:871K international rectifier
irfpe40.pdf 
PD - 94890 IRFPE40PbF Lead-Free 12/15/03 Document Number 91247 www.vishay.com 1 IRFPE40PbF Document Number 91247 www.vishay.com 2 IRFPE40PbF Document Number 91247 www.vishay.com 3 IRFPE40PbF Document Number 91247 www.vishay.com 4 IRFPE40PbF Document Number 91247 www.vishay.com 5 IRFPE40PbF Document Number 91247 www.vishay.com 6 IRFPE40PbF TO-247AC Package O
..2. Size:1490K vishay
irfpe40pbf.pdf
IRFPE40, SiHFPE40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 800 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 2.0 RoHS* Isolated Central Mounting Hole Qg (Max.) (nC) 130 COMPLIANT Fast Switching Qgs (nC) 17 Qgd (nC) 72 Ease of Paralleling Configuration Single Simple Drive Requirements D Lea
..3. Size:830K vishay
irfpe40.pdf
IRFPE40 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt rating VDS (V) 800 Repetitive avalanche rated RDS(on) ( )VGS = 10 V 2.0 Isolated central mounting hole Qg (Max.) (nC) 130 Fast switching Qgs (nC) 17 Qgd (nC) 72 Ease of paralleling Configuration Single Simple drive requirements D Material categorization fo
..4. Size:1525K vishay
irfpe40 sihfpe40.pdf
IRFPE40, SiHFPE40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 800 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 2.0 RoHS* Isolated Central Mounting Hole Qg (Max.) (nC) 130 COMPLIANT Fast Switching Qgs (nC) 17 Qgd (nC) 72 Ease of Paralleling Configuration Single Simple Drive Requirements D Complia
..5. Size:1530K infineon
irfpe40 sihfpe40.pdf
IRFPE40, SiHFPE40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 800 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 2.0 RoHS* Isolated Central Mounting Hole Qg (Max.) (nC) 130 COMPLIANT Fast Switching Qgs (nC) 17 Qgd (nC) 72 Ease of Paralleling Configuration Single Simple Drive Requirements D Complia
..6. Size:252K inchange semiconductor
irfpe40.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFPE40 FEATURES With TO-247 packaging With low gate drive requirements Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vol
9.2. Size:852K international rectifier
irfpe50.pdf
PD - 94845 IRFPE50PbF Lead-Free 11/14/03 Document Number 91248 www.vishay.com 1 IRFPE50PbF Document Number 91248 www.vishay.com 2 IRFPE50PbF Document Number 91248 www.vishay.com 3 IRFPE50PbF Document Number 91248 www.vishay.com 4 IRFPE50PbF Document Number 91248 www.vishay.com 5 IRFPE50PbF Document Number 91248 www.vishay.com 6 IRFPE50PbF TO-247AC Package O
9.3. Size:1575K vishay
irfpe50pbf.pdf
IRFPE50, SiHFPE50 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 800 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 1.2 RoHS* Isolated Central Mounting Hole Qg (Max.) (nC) 200 COMPLIANT Fast Switching Qgs (nC) 24 Qgd (nC) 110 Ease of Paralleling Configuration Single Simple Drive Requirements Complian
9.4. Size:1518K vishay
irfpe30pbf.pdf
IRFPE30, SiHFPE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rated VDS (V) 800 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 3.0 RoHS* Isolated Central Mounting Hole COMPLIANT Qg (Max.) (nC) 78 Fast Switching Qgs (nC) 9.6 Ease of Paralleling Qgd (nC) 45 Simple Drive Requirements Configuration Single Lead (P
9.5. Size:1610K vishay
irfpe50 sihfpe50.pdf
IRFPE50, SiHFPE50 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 800 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 1.2 RoHS* Isolated Central Mounting Hole Qg (Max.) (nC) 200 COMPLIANT Fast Switching Qgs (nC) 24 Qgd (nC) 110 Ease of Paralleling Configuration Single Simple Drive Requirements Complian
9.6. Size:1520K vishay
irfpe30 sihfpe30.pdf
IRFPE30, SiHFPE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rated VDS (V) 800 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 3.0 RoHS* Isolated Central Mounting Hole COMPLIANT Qg (Max.) (nC) 78 Fast Switching Qgs (nC) 9.6 Ease of Paralleling Qgd (nC) 45 Simple Drive Requirements Configuration Single Complian
9.7. Size:1615K infineon
irfpe50 sihfpe50.pdf
IRFPE50, SiHFPE50 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 800 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 1.2 RoHS* Isolated Central Mounting Hole Qg (Max.) (nC) 200 COMPLIANT Fast Switching Qgs (nC) 24 Qgd (nC) 110 Ease of Paralleling Configuration Single Simple Drive Requirements Complian
9.8. Size:1525K infineon
irfpe30 sihfpe30.pdf
IRFPE30, SiHFPE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rated VDS (V) 800 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 3.0 RoHS* Isolated Central Mounting Hole COMPLIANT Qg (Max.) (nC) 78 Fast Switching Qgs (nC) 9.6 Ease of Paralleling Qgd (nC) 45 Simple Drive Requirements Configuration Single Complian
Otros transistores... IRFPC40, IRFPC48, IRFPC50, IRFPC50A, IRFPC50LC, IRFPC60, IRFPC60LC, IRFPE30, AON7403, IRFPE50, IRFPF30, IRFPF40, IRFPF50, IRFPG30, IRFPG40, IRFPG50, IRFPS37N50A
