IRFPE40 Specs and Replacement
Type Designator: IRFPE40
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 36 nS
Cossⓘ -
Output Capacitance: 470 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
Package: TO247AC
- MOSFET ⓘ Cross-Reference Search
IRFPE40 datasheet
..1. Size:871K international rectifier
irfpe40.pdf 
PD - 94890 IRFPE40PbF Lead-Free 12/15/03 Document Number 91247 www.vishay.com 1 IRFPE40PbF Document Number 91247 www.vishay.com 2 IRFPE40PbF Document Number 91247 www.vishay.com 3 IRFPE40PbF Document Number 91247 www.vishay.com 4 IRFPE40PbF Document Number 91247 www.vishay.com 5 IRFPE40PbF Document Number 91247 www.vishay.com 6 IRFPE40PbF TO-247AC Package O... See More ⇒
..2. Size:1490K vishay
irfpe40pbf.pdf
IRFPE40, SiHFPE40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 800 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 2.0 RoHS* Isolated Central Mounting Hole Qg (Max.) (nC) 130 COMPLIANT Fast Switching Qgs (nC) 17 Qgd (nC) 72 Ease of Paralleling Configuration Single Simple Drive Requirements D Lea... See More ⇒
..3. Size:830K vishay
irfpe40.pdf
IRFPE40 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt rating VDS (V) 800 Repetitive avalanche rated RDS(on) ( )VGS = 10 V 2.0 Isolated central mounting hole Qg (Max.) (nC) 130 Fast switching Qgs (nC) 17 Qgd (nC) 72 Ease of paralleling Configuration Single Simple drive requirements D Material categorization fo... See More ⇒
..4. Size:1525K vishay
irfpe40 sihfpe40.pdf
IRFPE40, SiHFPE40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 800 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 2.0 RoHS* Isolated Central Mounting Hole Qg (Max.) (nC) 130 COMPLIANT Fast Switching Qgs (nC) 17 Qgd (nC) 72 Ease of Paralleling Configuration Single Simple Drive Requirements D Complia... See More ⇒
..5. Size:1530K infineon
irfpe40 sihfpe40.pdf
IRFPE40, SiHFPE40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 800 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 2.0 RoHS* Isolated Central Mounting Hole Qg (Max.) (nC) 130 COMPLIANT Fast Switching Qgs (nC) 17 Qgd (nC) 72 Ease of Paralleling Configuration Single Simple Drive Requirements D Complia... See More ⇒
..6. Size:252K inchange semiconductor
irfpe40.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFPE40 FEATURES With TO-247 packaging With low gate drive requirements Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vol... See More ⇒
9.2. Size:852K international rectifier
irfpe50.pdf
PD - 94845 IRFPE50PbF Lead-Free 11/14/03 Document Number 91248 www.vishay.com 1 IRFPE50PbF Document Number 91248 www.vishay.com 2 IRFPE50PbF Document Number 91248 www.vishay.com 3 IRFPE50PbF Document Number 91248 www.vishay.com 4 IRFPE50PbF Document Number 91248 www.vishay.com 5 IRFPE50PbF Document Number 91248 www.vishay.com 6 IRFPE50PbF TO-247AC Package O... See More ⇒
9.3. Size:1575K vishay
irfpe50pbf.pdf
IRFPE50, SiHFPE50 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 800 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 1.2 RoHS* Isolated Central Mounting Hole Qg (Max.) (nC) 200 COMPLIANT Fast Switching Qgs (nC) 24 Qgd (nC) 110 Ease of Paralleling Configuration Single Simple Drive Requirements Complian... See More ⇒
9.4. Size:1518K vishay
irfpe30pbf.pdf
IRFPE30, SiHFPE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rated VDS (V) 800 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 3.0 RoHS* Isolated Central Mounting Hole COMPLIANT Qg (Max.) (nC) 78 Fast Switching Qgs (nC) 9.6 Ease of Paralleling Qgd (nC) 45 Simple Drive Requirements Configuration Single Lead (P... See More ⇒
9.5. Size:1610K vishay
irfpe50 sihfpe50.pdf
IRFPE50, SiHFPE50 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 800 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 1.2 RoHS* Isolated Central Mounting Hole Qg (Max.) (nC) 200 COMPLIANT Fast Switching Qgs (nC) 24 Qgd (nC) 110 Ease of Paralleling Configuration Single Simple Drive Requirements Complian... See More ⇒
9.6. Size:1520K vishay
irfpe30 sihfpe30.pdf
IRFPE30, SiHFPE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rated VDS (V) 800 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 3.0 RoHS* Isolated Central Mounting Hole COMPLIANT Qg (Max.) (nC) 78 Fast Switching Qgs (nC) 9.6 Ease of Paralleling Qgd (nC) 45 Simple Drive Requirements Configuration Single Complian... See More ⇒
9.7. Size:1615K infineon
irfpe50 sihfpe50.pdf
IRFPE50, SiHFPE50 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 800 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 1.2 RoHS* Isolated Central Mounting Hole Qg (Max.) (nC) 200 COMPLIANT Fast Switching Qgs (nC) 24 Qgd (nC) 110 Ease of Paralleling Configuration Single Simple Drive Requirements Complian... See More ⇒
9.8. Size:1525K infineon
irfpe30 sihfpe30.pdf
IRFPE30, SiHFPE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rated VDS (V) 800 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 3.0 RoHS* Isolated Central Mounting Hole COMPLIANT Qg (Max.) (nC) 78 Fast Switching Qgs (nC) 9.6 Ease of Paralleling Qgd (nC) 45 Simple Drive Requirements Configuration Single Complian... See More ⇒
Detailed specifications: IRFPC40
, IRFPC48
, IRFPC50
, IRFPC50A
, IRFPC50LC
, IRFPC60
, IRFPC60LC
, IRFPE30
, AON7403
, IRFPE50
, IRFPF30
, IRFPF40
, IRFPF50
, IRFPG30
, IRFPG40
, IRFPG50
, IRFPS37N50A
.
Keywords - IRFPE40 MOSFET specs
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