IRFPE40 Datasheet and Replacement
   Type Designator: IRFPE40
   Type of Transistor: MOSFET
   Type of Control Channel: N
 -Channel   
Pd ⓘ
 - Maximum Power Dissipation: 150
 W   
|Vds|ⓘ - Maximum Drain-Source Voltage: 800
 V   
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
 V   
|Id| ⓘ - Maximum Drain Current: 5.4
 A   
Tj ⓘ - Maximum Junction Temperature: 150
 °C   
tr ⓘ - Rise Time: 36
 nS   
Cossⓘ - 
Output Capacitance: 470
 pF   
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2
 Ohm
		   Package: 
TO247AC
				
				  
				 
   - 
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IRFPE40 Datasheet (PDF)
 ..1.  Size:871K  international rectifier
 irfpe40.pdf 
 
						 
 
PD - 94890IRFPE40PbF Lead-Free12/15/03Document Number: 91247 www.vishay.com1IRFPE40PbFDocument Number: 91247 www.vishay.com2IRFPE40PbFDocument Number: 91247 www.vishay.com3IRFPE40PbFDocument Number: 91247 www.vishay.com4IRFPE40PbFDocument Number: 91247 www.vishay.com5IRFPE40PbFDocument Number: 91247 www.vishay.com6IRFPE40PbFTO-247AC Package O
 ..2.  Size:1490K  vishay
 irfpe40pbf.pdf 
 
						 
 
IRFPE40, SiHFPE40Vishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 800Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 2.0RoHS* Isolated Central Mounting HoleQg (Max.) (nC) 130COMPLIANT Fast SwitchingQgs (nC) 17Qgd (nC) 72 Ease of ParallelingConfiguration Single Simple Drive RequirementsD Lea
 ..3.  Size:830K  vishay
 irfpe40.pdf 
 
						 
 
IRFPE40www.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt ratingVDS (V) 800 Repetitive avalanche ratedRDS(on) ()VGS = 10 V 2.0 Isolated central mounting holeQg (Max.) (nC) 130 Fast switchingQgs (nC) 17Qgd (nC) 72 Ease of parallelingConfiguration Single Simple drive requirementsD Material categorization: fo
 ..4.  Size:1525K  vishay
 irfpe40 sihfpe40.pdf 
 
						 
 
IRFPE40, SiHFPE40Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 800Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 2.0RoHS* Isolated Central Mounting HoleQg (Max.) (nC) 130 COMPLIANT Fast SwitchingQgs (nC) 17Qgd (nC) 72  Ease of ParallelingConfiguration Single Simple Drive RequirementsD  Complia
 ..5.  Size:1530K  infineon
 irfpe40 sihfpe40.pdf 
 
						 
 
IRFPE40, SiHFPE40Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 800Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 2.0RoHS* Isolated Central Mounting HoleQg (Max.) (nC) 130 COMPLIANT Fast SwitchingQgs (nC) 17Qgd (nC) 72  Ease of ParallelingConfiguration Single Simple Drive RequirementsD  Complia
 ..6.  Size:252K  inchange semiconductor
 irfpe40.pdf 
 
						 
 
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFPE40FEATURESWith TO-247 packagingWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vol
 9.2.  Size:852K  international rectifier
 irfpe50.pdf 
 
						 
 
PD - 94845IRFPE50PbF Lead-Free11/14/03Document Number: 91248 www.vishay.com1IRFPE50PbFDocument Number: 91248 www.vishay.com2IRFPE50PbFDocument Number: 91248 www.vishay.com3IRFPE50PbFDocument Number: 91248 www.vishay.com4IRFPE50PbFDocument Number: 91248 www.vishay.com5IRFPE50PbFDocument Number: 91248 www.vishay.com6IRFPE50PbFTO-247AC Package O
 9.3.  Size:1575K  vishay
 irfpe50pbf.pdf 
 
						 
 
IRFPE50, SiHFPE50Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 800Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.2RoHS* Isolated Central Mounting HoleQg (Max.) (nC) 200 COMPLIANT Fast SwitchingQgs (nC) 24Qgd (nC) 110  Ease of ParallelingConfiguration Single Simple Drive Requirements Complian
 9.4.  Size:1518K  vishay
 irfpe30pbf.pdf 
 
						 
 
IRFPE30, SiHFPE30Vishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatedVDS (V) 800Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 3.0RoHS* Isolated Central Mounting HoleCOMPLIANTQg (Max.) (nC) 78 Fast SwitchingQgs (nC) 9.6 Ease of ParallelingQgd (nC) 45 Simple Drive RequirementsConfiguration Single Lead (P
 9.5.  Size:1610K  vishay
 irfpe50 sihfpe50.pdf 
 
						 
 
IRFPE50, SiHFPE50Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 800Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.2RoHS* Isolated Central Mounting HoleQg (Max.) (nC) 200 COMPLIANT Fast SwitchingQgs (nC) 24Qgd (nC) 110  Ease of ParallelingConfiguration Single Simple Drive Requirements Complian
 9.6.  Size:1520K  vishay
 irfpe30 sihfpe30.pdf 
 
						 
 
IRFPE30, SiHFPE30Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatedVDS (V) 800Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 3.0RoHS* Isolated Central Mounting HoleCOMPLIANTQg (Max.) (nC) 78 Fast SwitchingQgs (nC) 9.6 Ease of ParallelingQgd (nC) 45 Simple Drive RequirementsConfiguration Single Complian
 9.7.  Size:1615K  infineon
 irfpe50 sihfpe50.pdf 
 
						 
 
IRFPE50, SiHFPE50Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 800Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.2RoHS* Isolated Central Mounting HoleQg (Max.) (nC) 200 COMPLIANT Fast SwitchingQgs (nC) 24Qgd (nC) 110  Ease of ParallelingConfiguration Single Simple Drive Requirements Complian
 9.8.  Size:1525K  infineon
 irfpe30 sihfpe30.pdf 
 
						 
 
IRFPE30, SiHFPE30Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatedVDS (V) 800Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 3.0RoHS* Isolated Central Mounting HoleCOMPLIANTQg (Max.) (nC) 78 Fast SwitchingQgs (nC) 9.6 Ease of ParallelingQgd (nC) 45 Simple Drive RequirementsConfiguration Single Complian
Datasheet: IRFPC40
, IRFPC48
, IRFPC50
, IRFPC50A
, IRFPC50LC
, IRFPC60
, IRFPC60LC
, IRFPE30
, HY1906P
, IRFPE50
, IRFPF30
, IRFPF40
, IRFPF50
, IRFPG30
, IRFPG40
, IRFPG50
, IRFPS37N50A
. 
History: SFS9640
Keywords - IRFPE40 MOSFET datasheet
 IRFPE40 cross reference
 IRFPE40 equivalent finder
 IRFPE40 lookup
 IRFPE40 substitution
 IRFPE40 replacement