FDMC86340ET80 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDMC86340ET80

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 65 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 68 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 7.9 nS

Cossⓘ - Capacitancia de salida: 468 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0065 Ohm

Encapsulados: POWER33

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FDMC86340ET80 datasheet

 ..1. Size:281K  fairchild semi
fdmc86340et80.pdf pdf_icon

FDMC86340ET80

January 2015 FDMC86340ET80 N-Channel Shielded Gate Power Trench MOSFET 80 V, 68 A, 6.5 m Features General Description Extended TJ rating to 175 C This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that Shielded Gate MOSFET Technology incorporates Shielded Gate technology. This process has been Max rDS(on) = 6.5 m at VGS = 10

 5.1. Size:241K  fairchild semi
fdmc86340.pdf pdf_icon

FDMC86340ET80

 7.1. Size:299K  fairchild semi
fdmc86324.pdf pdf_icon

FDMC86340ET80

May 2010 FDMC86324 N-Channel Power Trench MOSFET 80 V, 20 A, 23 m Features General Description Max rDS(on) = 23 m at VGS = 10 V, ID = 7 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 37 m at VGS = 6 V, ID = 4 A been especially tailored to minimize the on-state resistance and Low Profile - 1 mm

 7.2. Size:492K  fairchild semi
fdmc86320.pdf pdf_icon

FDMC86340ET80

June 2014 FDMC86320 N-Channel Power Trench MOSFET 80 V, 22 A, 11.7 m Features General Description Max rDS(on) = 11.7 m at VGS = 10 V, ID = 10.7 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 16 m at VGS = 8 V, ID = 8.5 A ringing of DC/DC converters using either synchronous or MSL1 robust

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