FDMC86340ET80 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDMC86340ET80
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 65 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 68 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 7.9 nS
Cossⓘ - Capacitancia de salida: 468 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0065 Ohm
Encapsulados: POWER33
Búsqueda de reemplazo de FDMC86340ET80 MOSFET
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FDMC86340ET80 datasheet
fdmc86340et80.pdf
January 2015 FDMC86340ET80 N-Channel Shielded Gate Power Trench MOSFET 80 V, 68 A, 6.5 m Features General Description Extended TJ rating to 175 C This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that Shielded Gate MOSFET Technology incorporates Shielded Gate technology. This process has been Max rDS(on) = 6.5 m at VGS = 10
fdmc86324.pdf
May 2010 FDMC86324 N-Channel Power Trench MOSFET 80 V, 20 A, 23 m Features General Description Max rDS(on) = 23 m at VGS = 10 V, ID = 7 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 37 m at VGS = 6 V, ID = 4 A been especially tailored to minimize the on-state resistance and Low Profile - 1 mm
fdmc86320.pdf
June 2014 FDMC86320 N-Channel Power Trench MOSFET 80 V, 22 A, 11.7 m Features General Description Max rDS(on) = 11.7 m at VGS = 10 V, ID = 10.7 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 16 m at VGS = 8 V, ID = 8.5 A ringing of DC/DC converters using either synchronous or MSL1 robust
Otros transistores... FDMA86108LZ, FDMA86251, FDMB506P, FDMC6688P, FDMC8010ET30, FDMC86160ET100, FDMC86260ET150, FDMC86262P, RU7088R, FDMC86570LET60, FDMC8676, FDMC8678S, FDMD85100, FDMD86100, FDMD8900, FDME0106NZT, FDMS0308CS
History: FQP6N50C
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