FDMS86350ET80 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDMS86350ET80

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 187 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 198 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 34 nS

Cossⓘ - Capacitancia de salida: 1370 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0024 Ohm

Encapsulados: POWER56

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FDMS86350ET80 datasheet

 ..1. Size:306K  fairchild semi
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FDMS86350ET80

January 2015 FDMS86350ET80 N-Channel PowerTrench MOSFET 80 V, 198 A, 2.4 m Features General Description This N-Channel MOSFET is produced using Fairchild Extended TJ rating to 175 C Semiconductor s advanced Power Trench process that has Max rDS(on) = 2.4 m at VGS = 10 V, ID = 25 A been especially tailored to minimize the on-state resistance and yet maintain superior sw

 ..2. Size:347K  onsemi
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FDMS86350ET80

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 5.1. Size:272K  fairchild semi
fdms86350.pdf pdf_icon

FDMS86350ET80

November 2013 FDMS86350 N-Channel PowerTrench MOSFET 80 V, 130 A, 2.4 m Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 2.4 m at VGS = 10 V, ID = 25 A Semiconductor s advanced Power Trench process that has Max rDS(on) = 3.2 m at VGS = 8 V, ID = 22 A been especially tailored to minimize the on-state resistance and Advanced

 5.2. Size:620K  onsemi
fdms86350.pdf pdf_icon

FDMS86350ET80

FDMS86350 N-Channel PowerTrench MOSFET General Description 80 V, 130 A, 2.4 m This N-Channel MOSFET is produced using ON Semiconductor s advanced Power Trench process that has Features been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Max rDS(on) = 2.4 m at VGS = 10 V, ID = 25 A Max rDS(on) = 3.2 m at VGS = 8

Otros transistores... FDMD86100, FDMD8900, FDME0106NZT, FDMS0308CS, FDMS8050ET30, FDMS86150ET100, FDMS86202ET120, FDMS86255ET150, IRF540N, FDMS86369F085, FDMS86550ET60, FDMS86568F085, FDMS8660AS, FDMS8660S, FDMS8662, FDMS8670, FDMS8670AS