All MOSFET. FDMS86350ET80 Datasheet

 

FDMS86350ET80 MOSFET. Datasheet pdf. Equivalent


   Type Designator: FDMS86350ET80
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 187 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 198 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 110 nC
   trⓘ - Rise Time: 34 nS
   Cossⓘ - Output Capacitance: 1370 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0024 Ohm
   Package: POWER56

 FDMS86350ET80 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDMS86350ET80 Datasheet (PDF)

 ..1. Size:306K  fairchild semi
fdms86350et80.pdf

FDMS86350ET80
FDMS86350ET80

January 2015FDMS86350ET80N-Channel PowerTrench MOSFET80 V, 198 A, 2.4 mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Extended TJ rating to 175CSemiconductors advanced Power Trench process that has Max rDS(on) = 2.4 m at VGS = 10 V, ID = 25 Abeen especially tailored to minimize the on-state resistance and yet maintain superior sw

 ..2. Size:347K  onsemi
fdms86350et80.pdf

FDMS86350ET80
FDMS86350ET80

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 5.1. Size:272K  fairchild semi
fdms86350.pdf

FDMS86350ET80
FDMS86350ET80

November 2013FDMS86350N-Channel PowerTrench MOSFET 80 V, 130 A, 2.4 mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Max rDS(on) = 2.4 m at VGS = 10 V, ID = 25 ASemiconductors advanced Power Trench process that has Max rDS(on) = 3.2 m at VGS = 8 V, ID = 22 Abeen especially tailored to minimize the on-state resistance and Advanced

 5.2. Size:620K  onsemi
fdms86350.pdf

FDMS86350ET80
FDMS86350ET80

FDMS86350N-Channel PowerTrench MOSFETGeneral Description80 V, 130 A, 2.4 mThis N-Channel MOSFET is produced using ON Semiconductors advanced Power Trench process that has Featuresbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Max rDS(on) = 2.4 m at VGS = 10 V, ID = 25 A Max rDS(on) = 3.2 m at VGS = 8

 7.1. Size:747K  1
fdms86369-f085.pdf

FDMS86350ET80
FDMS86350ET80

2021/8/6 ONSM-S-A0003584697-1.pdfhttps://rocelec.widen.net/view/pdf/c0oupbqi6k/ONSM-S-A0003584697-1.pdf?t.download=true&u=5oefqw 1/62021/8/6 ONSM-S-A0003584697-1.pdfhttps://rocelec.widen.net/view/pdf/c0oupbqi6k/ONSM-S-A0003584697-1.pdf?t.download=true&u=5oefqw 2/62021/8/6 ONSM-S-A0003584697-1.pdfhttps://rocelec.widen.net/view/pdf/c0oupbqi6k/ONSM-S-A0003584697-1.pdf?t.download=true&u

 7.2. Size:449K  1
fdms86320.pdf

FDMS86350ET80
FDMS86350ET80

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 7.3. Size:431K  1
fdms86322.pdf

FDMS86350ET80
FDMS86350ET80

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 7.4. Size:554K  1
fdms86380-f085.pdf

FDMS86350ET80
FDMS86350ET80

ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

 7.5. Size:417K  1
fdms86310.pdf

FDMS86350ET80
FDMS86350ET80

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 7.6. Size:338K  fairchild semi
fdms86320.pdf

FDMS86350ET80
FDMS86350ET80

October 2014FDMS86320N-Channel PowerTrench MOSFET80 V, 44 A, 11.7 mFeatures General Description Max rDS(on) = 11.7 m at VGS = 10 V, ID = 10.5 AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 15 m at VGS = 8 V, ID = 8.5 Aringing of DC/DC converters using either synchronous or Advanced P

 7.7. Size:216K  fairchild semi
fdms86322.pdf

FDMS86350ET80
FDMS86350ET80

October 2010FDMS86322N-Channel PowerTrench MOSFET 80 V, 60 A, 7.65 m Features General DescriptionThis N-Channel MOSFET is produced using Fairchild Max rDS(on) = 7.65 m at VGS = 10 V, ID = 13 ASemiconductors advanced Power Trench process thant has Max rDS(on) = 12 m at VGS = 6 V, ID = 7.2 Abeen especially tailored to minimize the on-state resistance and Advanced P

 7.8. Size:496K  fairchild semi
fdms86369 f085.pdf

FDMS86350ET80
FDMS86350ET80

March 2015FDMS86369_F085N-Channel PowerTrench MOSFET80 V, 65 A, 7.5 m Features Typical RDS(on) = 5.9 m at VGS = 10V, ID = 65 A Typical Qg(tot) = 35 nC at VGS = 10V, ID = 65 A UIS Capability RoHS Compliant Qualified to AEC Q101Applications Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers Integrated Starter/AlternatorForcurrent

 7.9. Size:309K  fairchild semi
fdms86310.pdf

FDMS86350ET80
FDMS86350ET80

October 2014FDMS86310N-Channel PowerTrench MOSFET80 V, 50 A, 4.8 mFeatures General Description Max rDS(on) = 4.8 m at VGS = 10 V, ID = 17 AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 6.7 m at VGS = 8 V, ID = 14 Aringing of DC/DC converters using either synchronous or Advanced Packa

 7.10. Size:244K  fairchild semi
fdms86300dc.pdf

FDMS86350ET80
FDMS86350ET80

December 2014FDMS86300DCN-Channel Dual CoolTM PowerTrench MOSFET80 V, 110 A, 3.1 mFeatures General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process. Max rDS(on) = 3.1 m at VGS = 10 V, ID = 24 AAdvancements in both silicon and Dual CoolTM package Max rDS(on) = 4.0 m a

 7.11. Size:535K  fairchild semi
fdms86368 f085.pdf

FDMS86350ET80
FDMS86350ET80

December 2014FDMS86368_F085N-Channel PowerTrench MOSFET80 V, 80 A, 4.5 m Features Typical RDS(on) = 3.7 m at VGS = 10V, ID = 80 A Typical Qg(tot) = 57 nC at VGS = 10V, ID = 80 A UIS Capability RoHS Compliant Qualified to AEC Q101Applications Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers Integrated Starter/AlternatorForcu

 7.12. Size:267K  fairchild semi
fdms86300.pdf

FDMS86350ET80
FDMS86350ET80

August 2011FDMS86300N-Channel PowerTrench MOSFET 80 V, 42 A, 3.9 mFeatures General Description Max rDS(on) = 3.9 m at VGS = 10 V, ID = 19 AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 5.5 m at VGS = 8 V, ID = 15.5 Aringing of DC/DC converters using either synchronous or Advanced Pac

 7.13. Size:747K  onsemi
fdms86369-f085.pdf

FDMS86350ET80
FDMS86350ET80

2021/8/6 ONSM-S-A0003584697-1.pdfhttps://rocelec.widen.net/view/pdf/c0oupbqi6k/ONSM-S-A0003584697-1.pdf?t.download=true&u=5oefqw 1/62021/8/6 ONSM-S-A0003584697-1.pdfhttps://rocelec.widen.net/view/pdf/c0oupbqi6k/ONSM-S-A0003584697-1.pdf?t.download=true&u=5oefqw 2/62021/8/6 ONSM-S-A0003584697-1.pdfhttps://rocelec.widen.net/view/pdf/c0oupbqi6k/ONSM-S-A0003584697-1.pdf?t.download=true&u

 7.14. Size:431K  onsemi
fdms86322.pdf

FDMS86350ET80
FDMS86350ET80

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 7.15. Size:518K  onsemi
fdms86368-f085.pdf

FDMS86350ET80
FDMS86350ET80

ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

 7.16. Size:417K  onsemi
fdms86310.pdf

FDMS86350ET80
FDMS86350ET80

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 7.17. Size:461K  onsemi
fdms86381-f085.pdf

FDMS86350ET80
FDMS86350ET80

FDMS86381-F085N-Channel PowerTrench MOSFET 80 V, 30 A, 22 mFeatures Typical RDS(on) = 17.2 m at VGS = 10V, ID = 30 A Typical Qg(tot) = 14 nC at VGS = 10V, ID = 30 A UIS Capability RoHS Compliant Qualified to AEC Q101Applications Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers Electronic Steering Integrated Starter/Alternator D

 7.18. Size:206K  onsemi
fdms86300dc.pdf

FDMS86350ET80
FDMS86350ET80

FDMS86300DCPOWERTRENCH) MOSFET,N-Channel, DUAL COOL) 5680 V, 110 A, 3.1 mWGeneral Descriptionwww.onsemi.comThis N-Channel MOSFET is produced using FairchildSemiconductors advanced POWERTRENCH process thatELECTRICAL CONNECTIONincorporates Shielded Gate technology. Advancements in both siliconand DUAL COOL package technologies have been combined toS Doffer the lowes

 7.19. Size:452K  onsemi
fdms86300.pdf

FDMS86350ET80
FDMS86350ET80

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: FDMS8D8N15C | STU313D | FDMS86300

 

 
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