FDMS8674 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDMS8674

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 78 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 21 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 4 nS

Cossⓘ - Capacitancia de salida: 860 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.005 Ohm

Encapsulados: POWER56

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FDMS8674 datasheet

 ..1. Size:234K  fairchild semi
 fdms8674.pdf pdf_icon

FDMS8674

May 2009 FDMS8674 tm N-Channel PowerTrench MOSFET 30V, 21A, 5.0m Features General Description Max rDS(on) = 5.0m at VGS = 10V, ID = 17A The FDMS8674 has been designed to minimize losses in power conversion application. Advancements in both silicon and Max rDS(on) = 8.0m at VGS = 4.5V, ID = 14A package technologies have been combined to offer the lowest Advanced Packa

 7.1. Size:283K  fairchild semi
 fdms8670s.pdf pdf_icon

FDMS8674

October 2014 FDMS8670S tm N-Channel PowerTrench SyncFETTM 30V, 42A, 3.5m Features General Description The FDMS8670S has been designed to minimize losses in Max rDS(on) = 3.5m at VGS = 10V, ID = 20A power conversion application. Advancements in both silicon and Max rDS(on) = 5.0m at VGS = 4.5V, ID = 17A package technologies have been combined to offer the lowest Adva

 7.2. Size:237K  fairchild semi
 fdms8670.pdf pdf_icon

FDMS8674

May 2009 FDMS8670 tm N-Channel Power Trench MOSFET 30V, 42A, 2.6m Features General Description Max rDS(on) = 2.6m at VGS = 10V, ID = 24A This N-Channel MOSFET is produced using Fairchild Semiconductor's latest proprietary Power Trench process that Max rDS(on) = 3.8m at VGS = 4.5V, ID = 18A has been especially tailored to minimize on-resistance. This part 100% UIL T

 7.3. Size:242K  fairchild semi
 fdms8672s.pdf pdf_icon

FDMS8674

May 2009 FDMS8672S N-Channel PowerTrench SyncFETTM 30V, 35A, 5m Features General Description The FDMS8672S has been designed to minimize losses in Max rDS(on) = 5.0m at VGS = 10V, ID = 17A power conversion application. Advancements in both silicon and Max rDS(on) = 7.0m at VGS = 4.5V, ID = 15A package technologies have been combined to offer the lowest Advanced Packa

MOSTRAR MÁS

Otros transistores... FDMS86550ET60, FDMS86568F085, FDMS8660AS, FDMS8660S, FDMS8662, FDMS8670, FDMS8670AS, FDMS8672AS, IRFP260N, FDMS8690, FDMS8692, FDMS9408F085, FDMT800100DC, FDMT800150DC, FDMT800152DC, FDN336P-NL, FDN359BNF095