FDMS8674. Аналоги и основные параметры
Наименование производителя: FDMS8674
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 78 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 21 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 4 ns
Cossⓘ - Выходная емкость: 860 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.005 Ohm
Тип корпуса: POWER56
Аналог (замена) для FDMS8674
- подборⓘ MOSFET транзистора по параметрам
FDMS8674 даташит
fdms8674.pdf
May 2009 FDMS8674 tm N-Channel PowerTrench MOSFET 30V, 21A, 5.0m Features General Description Max rDS(on) = 5.0m at VGS = 10V, ID = 17A The FDMS8674 has been designed to minimize losses in power conversion application. Advancements in both silicon and Max rDS(on) = 8.0m at VGS = 4.5V, ID = 14A package technologies have been combined to offer the lowest Advanced Packa
fdms8670s.pdf
October 2014 FDMS8670S tm N-Channel PowerTrench SyncFETTM 30V, 42A, 3.5m Features General Description The FDMS8670S has been designed to minimize losses in Max rDS(on) = 3.5m at VGS = 10V, ID = 20A power conversion application. Advancements in both silicon and Max rDS(on) = 5.0m at VGS = 4.5V, ID = 17A package technologies have been combined to offer the lowest Adva
fdms8670.pdf
May 2009 FDMS8670 tm N-Channel Power Trench MOSFET 30V, 42A, 2.6m Features General Description Max rDS(on) = 2.6m at VGS = 10V, ID = 24A This N-Channel MOSFET is produced using Fairchild Semiconductor's latest proprietary Power Trench process that Max rDS(on) = 3.8m at VGS = 4.5V, ID = 18A has been especially tailored to minimize on-resistance. This part 100% UIL T
fdms8672s.pdf
May 2009 FDMS8672S N-Channel PowerTrench SyncFETTM 30V, 35A, 5m Features General Description The FDMS8672S has been designed to minimize losses in Max rDS(on) = 5.0m at VGS = 10V, ID = 17A power conversion application. Advancements in both silicon and Max rDS(on) = 7.0m at VGS = 4.5V, ID = 15A package technologies have been combined to offer the lowest Advanced Packa
Другие IGBT... FDMS86550ET60, FDMS86568F085, FDMS8660AS, FDMS8660S, FDMS8662, FDMS8670, FDMS8670AS, FDMS8672AS, IRFP260N, FDMS8690, FDMS8692, FDMS9408F085, FDMT800100DC, FDMT800150DC, FDMT800152DC, FDN336P-NL, FDN359BNF095
History: STP9NK60ZD | IRFI730A | FTK1208
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