FDN336P-NL MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDN336P-NL

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V

|Id|ⓘ - Corriente continua de drenaje: 1.3 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 12 nS

Cossⓘ - Capacitancia de salida: 80 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.2 Ohm

Encapsulados: SSOT-3

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FDN336P-NL datasheet

 ..1. Size:73K  fairchild semi
 fdn336p-nl.pdf pdf_icon

FDN336P-NL

January 2005 FDN336P Single P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced 1.3 A, 20 V. RDS(ON) = 0.20 @ VGS = 4.5 V using Fairchild Semiconductor s advanced RDS(ON) = 0.27 @ VGS = 2.5 V PowerTrench process that has been especially tailored Low gate charge (3.6 nC typical

 7.1. Size:66K  onsemi
 fdn336p.pdf pdf_icon

FDN336P-NL

November 1998 FDN336P Single P-Channel 2.5V Specified PowerTrenchTM MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced -1.3 A, -20 V. RDS(ON) = 0.20 @ VGS = -4.5 V using Fairchild Semiconductor's advanced PowerTrench RDS(ON) = 0.27 @ VGS= -2.5 V. process that has been especially tailored to minimize the Low gate charge (3.6 nC typical).

 7.2. Size:98K  kexin
 fdn336p.pdf pdf_icon

FDN336P-NL

SMD Type MOSFET P-Channel Enhancement MOSFET FDN336P Features SOT-23 Unit mm 2.9+0.1 -0.1 VDS (V) =-20V +0.1 0.4 -0.1 RDS(ON) 130m (VGS =-4.5V) 3 RDS(ON) 190m (VGS =-2.5V) 12 +0.1 +0.05 0.95-0.1 0.1 -0.01 1.9+0.1 -0.1 G 1 1.Gate 3 D 2.Source S 2 3.Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS -20 V Gate-Source

 7.3. Size:1031K  cn shikues
 fdn336p.pdf pdf_icon

FDN336P-NL

FDN336P P-Channel Enhancement Mode MOSFET Feature -20V/-2A, RDS(ON) = 120m (MAX) @VGS = -4.5V. DS(ON) GS R = 150m (MAX) @V = -2.5V. DS(ON) Super High dense cell design for extremely low R Reliable and Rugged SOT-23 for Surface Mount Package SOT-23 Applications Power Management Portable Equipment and Battery Powered Systems. A T =25 Unless Otherwise noted Ab

MOSTRAR MÁS

Otros transistores... FDMS8672AS, FDMS8674, FDMS8690, FDMS8692, FDMS9408F085, FDMT800100DC, FDMT800150DC, FDMT800152DC, 2N7000, FDN359BNF095, FDN86501LZ, FDP020N06BF102, FDP10AN06A0, FDP120AN15A0, FDP13AN06A0, FDP14AN06LA0, FDP15N50