January 2005 FDN336P Single P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced 1.3 A, 20 V. RDS(ON) = 0.20 @ VGS = 4.5 V using Fairchild Semiconductors advanced RDS(ON) = 0.27 @ VGS = 2.5 V PowerTrench process that has been especially tailored Low gate charge (3.6 nC typical

November 1998 FDN336P Single P-Channel 2.5V Specified PowerTrenchTM MOSFET General Description FeaturesThis P-Channel 2.5V specified MOSFET is produced -1.3 A, -20 V. RDS(ON) = 0.20 @ VGS = -4.5 Vusing Fairchild Semiconductor's advanced PowerTrench RDS(ON) = 0.27 @ VGS= -2.5 V. process that has been especially tailored to minimize theLow gate charge (3.6 nC typical).

SMD Type MOSFETP-Channel Enhancement MOSFETFDN336P FeaturesSOT-23Unit: mm2.9+0.1-0.1 VDS (V) =-20V+0.10.4 -0.1 RDS(ON) 130m (VGS =-4.5V)3 RDS(ON) 190m (VGS =-2.5V)12+0.1+0.050.95-0.1 0.1 -0.011.9+0.1-0.1G 11.Gate3 D2.SourceS 23.Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating UnitDrain-Source Voltage VDS -20VGate-Source

FDN336P P-Channel Enhancement Mode MOSFETFeature -20V/-2A, RDS(ON) = 120m(MAX) @VGS = -4.5V. DS(ON) GS R = 150m(MAX) @V = -2.5V. DS(ON) Super High dense cell design for extremely low RReliable and Rugged SOT-23 for Surface Mount Package SOT-23 Applications Power Management Portable Equipment and Battery Powered Systems. AT =25 Unless Otherwise noted Ab