FDP2570 Todos los transistores

 ..1. Size:77K  fairchild semi
 fdp2570.pdf

August 2001 FDP2570/FDB2570 150V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 22 A, 150 V. RDS(ON) = 80 m @ VGS = 10 V specifically for switching on the primary side in the RDS(ON) = 90 m @ VGS = 6 V isolated DC/DC converter application. Any application requiring a 150V MOSFETs with low on-resistance and

 8.1. Size:269K  fairchild semi
 fdb2572 fdp2572.pdf

September 2002 FDB2572 / FDP2572 N-Channel PowerTrench MOSFET 150V, 29A, 54m Features Applications rDS(ON) = 45m (Typ.), VGS = 10V, ID = 9A DC/DC converters and Off-Line UPS Qg(tot) = 26nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Synchrono

 8.2. Size:670K  onsemi
 fdp2572.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.3. Size:283K  inchange semiconductor
 fdp2572.pdf

isc N-Channel MOSFET Transistor FDP2572 FEATURES With TO-220 packaging Drain Source Voltage- V 150V DSS Static drain-source on-resistance RDS(on) 54m @V =10V GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 )