August 2001FDP2570/FDB2570150V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 22 A, 150 V. RDS(ON) = 80 m @ VGS = 10 Vspecifically for switching on the primary side in theRDS(ON) = 90 m @ VGS = 6 Visolated DC/DC converter application. Any applicationrequiring a 150V MOSFETs with low on-resistance and

September 2002FDB2572 / FDP2572N-Channel PowerTrench MOSFET150V, 29A, 54mFeatures Applications rDS(ON) = 45m (Typ.), VGS = 10V, ID = 9A DC/DC converters and Off-Line UPS Qg(tot) = 26nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Synchrono

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

isc N-Channel MOSFET Transistor FDP2572FEATURESWith TO-220 packagingDrain Source Voltage-: V 150VDSSStatic drain-source on-resistance:RDS(on) 54m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)