FDP2670 Todos los transistores

 ..1. Size:79K  fairchild semi
 fdp2670.pdf

November 2001 FDP2670/FDB2670 200V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 19 A, 200 V. RDS(ON) = 130 m @ VGS = 10 V specifically for switching on the primary side in the isolated DC/DC converter application. Any application Low gate charge (27 nC typical) requiring a 200V MOSFETs with low on-resista

 9.1. Size:353K  fairchild semi
 fdp2614.pdf

November 2007 tm FDP2614 200V N-Channel PowerTrench MOSFET General Description Description This N-Channel MOSFET is produced using Fairchild Semicon- 62A, 200V, RDS(on) = 22.9m @VGS = 10 V ductor s advanced PowerTrench process that has been espe- Fast switching speed cially tailored to minimize the on-state resistance and yet Low gate charge maintain superior switching p

 9.2. Size:567K  fairchild semi
 fdp26n40 fdpf26n40.pdf

February 2008 UniFETTM FDP26N40 / FDPF26N40 tm N-Channel MOSFET 400V, 26A, 0.16 Features Description RDS(on) = 0.13 ( Typ.)@ VGS = 10V, ID = 13A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( Typ. 48nC) stripe, DMOS technology. Low Crss ( Typ. 30pF) This advanced technology h

 9.3. Size:1106K  onsemi
 fdp2614.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.4. Size:283K  inchange semiconductor
 fdp2614.pdf

isc N-Channel MOSFET Transistor FDP2614 FEATURES With TO-220 packaging Drain Source Voltage- V 200V DSS Static drain-source on-resistance RDS(on) 27m @V =10V GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 )

 9.5. Size:259K  inchange semiconductor
 fdp26n40.pdf

isc N-Channel MOSFET Transistor FDP26N40 FEATURES With TO-220 packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR