FDP2670 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: FDP2670
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 93 W
Предельно допустимое напряжение сток-исток |Uds|: 200 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 4.5 V
Максимально допустимый постоянный ток стока |Id|: 19 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 27 nC
Время нарастания (tr): 5 ns
Выходная емкость (Cd): 71 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.13 Ohm
Тип корпуса: TO-220
FDP2670 Datasheet (PDF)
fdp2670.pdf
November 2001FDP2670/FDB2670200V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 19 A, 200 V. RDS(ON) = 130 m @ VGS = 10 Vspecifically for switching on the primary side in theisolated DC/DC converter application. Any application Low gate charge (27 nC typical)requiring a 200V MOSFETs with low on-resista
fdp2614.pdf
November 2007tmFDP2614200V N-Channel PowerTrench MOSFETGeneral Description DescriptionThis N-Channel MOSFET is produced using Fairchild Semicon- 62A, 200V, RDS(on) = 22.9m @VGS = 10 Vductors advanced PowerTrench process that has been espe- Fast switching speedcially tailored to minimize the on-state resistance and yet Low gate chargemaintain superior switching p
fdp26n40 fdpf26n40.pdf
February 2008UniFETTMFDP26N40 / FDPF26N40tmN-Channel MOSFET 400V, 26A, 0.16Features Description RDS(on) = 0.13 ( Typ.)@ VGS = 10V, ID = 13A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 48nC)stripe, DMOS technology. Low Crss ( Typ. 30pF)This advanced technology h
fdp2614.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdp2614.pdf
isc N-Channel MOSFET Transistor FDP2614FEATURESWith TO-220 packagingDrain Source Voltage-: V 200VDSSStatic drain-source on-resistance:RDS(on) 27m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)
fdp26n40.pdf
isc N-Channel MOSFET Transistor FDP26N40FEATURESWith TO-220 packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR
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