FDP2670. Аналоги и основные параметры
Наименование производителя: FDP2670
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 93 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 200 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 19 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ - Время нарастания: 5 ns
Cossⓘ - Выходная емкость: 71 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.13 Ohm
Тип корпуса: TO-220
Аналог (замена) для FDP2670
- подборⓘ MOSFET транзистора по параметрам
FDP2670 даташит
fdp2670.pdf
November 2001 FDP2670/FDB2670 200V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 19 A, 200 V. RDS(ON) = 130 m @ VGS = 10 V specifically for switching on the primary side in the isolated DC/DC converter application. Any application Low gate charge (27 nC typical) requiring a 200V MOSFETs with low on-resista
fdp2614.pdf
November 2007 tm FDP2614 200V N-Channel PowerTrench MOSFET General Description Description This N-Channel MOSFET is produced using Fairchild Semicon- 62A, 200V, RDS(on) = 22.9m @VGS = 10 V ductor s advanced PowerTrench process that has been espe- Fast switching speed cially tailored to minimize the on-state resistance and yet Low gate charge maintain superior switching p
fdp26n40 fdpf26n40.pdf
February 2008 UniFETTM FDP26N40 / FDPF26N40 tm N-Channel MOSFET 400V, 26A, 0.16 Features Description RDS(on) = 0.13 ( Typ.)@ VGS = 10V, ID = 13A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( Typ. 48nC) stripe, DMOS technology. Low Crss ( Typ. 30pF) This advanced technology h
fdp2614.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
Другие IGBT... FDP13AN06A0, FDP14AN06LA0, FDP15N50, FDP15N65, FDP16N50, FDP20AN06A0, FDP24AN06LA0, FDP2570, AO3401, FDP3205, FDP5500, FDP5645, FDP5N50, FDP75N08, FDP79N15, FDP8441F085, FDP8442
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