FDP5N50 Todos los transistores

 

FDP5N50 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDP5N50
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 85 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 22 nS
   Cossⓘ - Capacitancia de salida: 66 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.4 Ohm
   Paquete / Cubierta: TO-220
     - Selección de transistores por parámetros

 

FDP5N50 Datasheet (PDF)

 ..1. Size:265K  fairchild semi
 fdp5n50 fdpf5n50.pdf pdf_icon

FDP5N50

December 2007UniFETTMFDP5N50 / FDPF5N50tmN-Channel MOSFET 500V, 5A, 1.4Features Description RDS(on) = 1.15 ( Typ.)@ VGS = 10V, ID = 2.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 11nC)stripe, DMOS technology. Low Crss ( Typ. 5pF)This advanced technology has bee

 ..2. Size:371K  fairchild semi
 fdp5n50.pdf pdf_icon

FDP5N50

May 2012UniFETTMFDP5N50 / FDPF5N50TtmN-Channel MOSFET 500V, 5A, 1.4Features Description RDS(on) = 1.15 ( Typ.)@ VGS = 10V, ID = 2.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 11nC)stripe, DMOS technology. Low Crss ( Typ. 5pF)This advanced technology has been es

 0.1. Size:247K  fairchild semi
 fdp5n50nz fdpf5n50nz.pdf pdf_icon

FDP5N50

March 2010UniFET-IITMFDP5N50NZ / FDPF5N50NZtmN-Channel MOSFET500V, 4.5A, 1.5Features Description RDS(on) = 1.38 (Typ.)@ VGS = 10V, ID = 2.25A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, Low Gate Charge (Typ. 9nC)DMOS technology. Low Crss (Typ. 4pF)This advance technology has b

 0.2. Size:256K  fairchild semi
 fdp5n50nzf fdpf5n50nzf.pdf pdf_icon

FDP5N50

February 2010TMUniFET-IIFDP5N50NZF / FDPF5N50NZFtmN-Channel MOSFET500V, 4.2A, 1.75Features Description RDS(on) = 1.57 ( Typ.)@ VGS = 10V, ID = 2.1A These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low Gate Charge ( Typ. 9nC)DMOS technology. Low Crss ( Typ. 4pF)This advanc

MOSTRAR MÁS

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: NCE65T900I | AP9563GK | P9515BD | OSG80R900FF | IRFSL31N20DP | HM4612 | AOTF7N70

 

 
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