FDP5N50 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: FDP5N50
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 85 W
Предельно допустимое напряжение сток-исток |Uds|: 500 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 5 V
Максимально допустимый постоянный ток стока |Id|: 5 A
Максимальная температура канала (Tj): 150 °C
Время нарастания (tr): 22 ns
Выходная емкость (Cd): 66 pf
Сопротивление сток-исток открытого транзистора (Rds): 1.4 Ohm
Тип корпуса: TO-220
FDP5N50 Datasheet (PDF)
fdp5n50 fdpf5n50.pdf
December 2007UniFETTMFDP5N50 / FDPF5N50tmN-Channel MOSFET 500V, 5A, 1.4Features Description RDS(on) = 1.15 ( Typ.)@ VGS = 10V, ID = 2.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 11nC)stripe, DMOS technology. Low Crss ( Typ. 5pF)This advanced technology has bee
fdp5n50.pdf
May 2012UniFETTMFDP5N50 / FDPF5N50TtmN-Channel MOSFET 500V, 5A, 1.4Features Description RDS(on) = 1.15 ( Typ.)@ VGS = 10V, ID = 2.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 11nC)stripe, DMOS technology. Low Crss ( Typ. 5pF)This advanced technology has been es
fdp5n50nz fdpf5n50nz.pdf
March 2010UniFET-IITMFDP5N50NZ / FDPF5N50NZtmN-Channel MOSFET500V, 4.5A, 1.5Features Description RDS(on) = 1.38 (Typ.)@ VGS = 10V, ID = 2.25A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, Low Gate Charge (Typ. 9nC)DMOS technology. Low Crss (Typ. 4pF)This advance technology has b
fdp5n50nzf fdpf5n50nzf.pdf
February 2010TMUniFET-IIFDP5N50NZF / FDPF5N50NZFtmN-Channel MOSFET500V, 4.2A, 1.75Features Description RDS(on) = 1.57 ( Typ.)@ VGS = 10V, ID = 2.1A These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low Gate Charge ( Typ. 9nC)DMOS technology. Low Crss ( Typ. 4pF)This advanc
fdp5n50f fdpf5n50ft.pdf
December 2007UniFETTMFDP5N50F / FDPF5N50FTtmN-Channel MOSFET, FRFET 500V, 4.5A, 1.55Features Description RDS(on) = 1.25 ( Typ.)@ VGS = 10V, ID = 2.25A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 11nC)stripe, DMOS technology. Low Crss ( Typ. 5pF)This advanced tech
fdp5n50u fdpf5n50ut.pdf
November2009TMUltra FRFETFDP5N50U / FDPF5N50UTtmN-Channel MOSFET, FRFET500V, 4A, 2.0Features Description RDS(on) = 1.65 ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( Typ. 11nC)DOMS technology. Low Crss ( Typ. 5pF)This advance tech
fdp5n50nzu fdpf5n50nzu.pdf
February 2010TMUniFET-IIFDP5N50NZU / FDPF5N50NZUtmN-Channel MOSFET500V, 3.9A, 2.0Features Description RDS(on) = 1.7 ( Typ.)@ VGS = 10V, ID = 1.95A These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low Gate Charge ( Typ. 9nC)DMOS technology. Low Crss ( Typ. 4pF)This advance
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