FDP8878 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDP8878
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 40.5 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 40 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 244 nS
Cossⓘ - Capacitancia de salida: 188 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.015 Ohm
Encapsulados: TO-220AB
Búsqueda de reemplazo de FDP8878 MOSFET
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FDP8878 datasheet
fdp8878.pdf
November 2005 FDP8878 N-Channel Logic Level PowerTrench MOSFET 30V, 40A, 15m General Descriptions Features rDS(ON) = 15m , VGS = 10V, ID = 40A This N-Channel MOSFET has been designed specifically to rDS(ON) = 19m , VGS = 4.5V, ID = 36A improve the overall efficiency of DC/DC converters using High performance trench technology for extremely low either synchronous or con
fdp8876.pdf
November 2005 FDP8876 N-Channel PowerTrench MOSFET 30V, 71A, 8.5m General Descriptions Features rDS(ON) = 8.5m , VGS = 10V, ID = 40A This N-Channel MOSFET has been designed specifically to rDS(ON) = 10.3m , VGS = 4.5V, ID = 40A improve the overall efficiency of DC/DC converters using High performance trench technology for extremely low either synchronous or conventiona
fdp8874.pdf
N May 2008 tmM FDP8874 N-Channel PowerTrench MOSFET 30V, 114A, 5.3m General Description Features This N-Channel MOSFET has been designed specifically to rDS(ON) = 5.3m , VGS = 10V, ID = 40A improve the overall efficiency of DC/DC converters using rDS(ON) = 6.6m , VGS = 4.5V, ID = 40A either synchronous or conventional switching PWM controllers. It has been optimized
fdp8870 f085.pdf
July 2010 FDP8870_F085 N-Channel PowerTrench MOSFET 30V, 156A, 4.1m General Description Features This N-Channel MOSFET has been designed specifically to rDS(ON) = 4.1m , VGS = 10V, ID = 35A improve the overall efficiency of DC/DC converters using rDS(ON) = 4.6m , VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has been optimized fo
Otros transistores... FDP5500, FDP5645, FDP5N50, FDP75N08, FDP79N15, FDP8441F085, FDP8442, FDP8443, 5N65, FDP8N50NZU, FDPC5018SG, FDPC5030SG, FDPF12N35, FDPF12N50NZT, FDPF14N30T, FDPF15N65YDTU, FDPF18N20F
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