FDP8878 Specs and Replacement

Type Designator: FDP8878

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 244 nS

Cossⓘ - Output Capacitance: 188 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm

Package: TO-220AB

FDP8878 substitution

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FDP8878 datasheet

 ..1. Size:250K  fairchild semi
fdp8878.pdf pdf_icon

FDP8878

November 2005 FDP8878 N-Channel Logic Level PowerTrench MOSFET 30V, 40A, 15m General Descriptions Features rDS(ON) = 15m , VGS = 10V, ID = 40A This N-Channel MOSFET has been designed specifically to rDS(ON) = 19m , VGS = 4.5V, ID = 36A improve the overall efficiency of DC/DC converters using High performance trench technology for extremely low either synchronous or con... See More ⇒

 8.1. Size:308K  fairchild semi
fdp8876.pdf pdf_icon

FDP8878

November 2005 FDP8876 N-Channel PowerTrench MOSFET 30V, 71A, 8.5m General Descriptions Features rDS(ON) = 8.5m , VGS = 10V, ID = 40A This N-Channel MOSFET has been designed specifically to rDS(ON) = 10.3m , VGS = 4.5V, ID = 40A improve the overall efficiency of DC/DC converters using High performance trench technology for extremely low either synchronous or conventiona... See More ⇒

 8.2. Size:469K  fairchild semi
fdp8874.pdf pdf_icon

FDP8878

N May 2008 tmM FDP8874 N-Channel PowerTrench MOSFET 30V, 114A, 5.3m General Description Features This N-Channel MOSFET has been designed specifically to rDS(ON) = 5.3m , VGS = 10V, ID = 40A improve the overall efficiency of DC/DC converters using rDS(ON) = 6.6m , VGS = 4.5V, ID = 40A either synchronous or conventional switching PWM controllers. It has been optimized ... See More ⇒

 8.3. Size:337K  fairchild semi
fdp8870 f085.pdf pdf_icon

FDP8878

July 2010 FDP8870_F085 N-Channel PowerTrench MOSFET 30V, 156A, 4.1m General Description Features This N-Channel MOSFET has been designed specifically to rDS(ON) = 4.1m , VGS = 10V, ID = 35A improve the overall efficiency of DC/DC converters using rDS(ON) = 4.6m , VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has been optimized fo... See More ⇒

Detailed specifications: FDP5500, FDP5645, FDP5N50, FDP75N08, FDP79N15, FDP8441F085, FDP8442, FDP8443, 5N65, FDP8N50NZU, FDPC5018SG, FDPC5030SG, FDPF12N35, FDPF12N50NZT, FDPF14N30T, FDPF15N65YDTU, FDPF18N20F

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