FDPC5018SG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDPC5018SG
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 23 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 56 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 2 nS
Cossⓘ - Capacitancia de salida: 397 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.005 Ohm
Paquete / Cubierta: POWERCLIP5X6
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FDPC5018SG Datasheet (PDF)
fdpc5018sg.pdf
May 2015FDPC5018SGPowerTrench Power Clip 30V Asymmetric Dual N-Channel MOSFETFeatures General DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a dual package. The switch node has been internally connected to Max rDS(on) = 5.0 m at VGS = 10 V, ID = 17 Aenable easy placement and routing of synchronous buck Max rDS(on) = 6.5 m at VGS = 4
fdpc5030sg.pdf
May 2015FDPC5030SGPowerTrench Power Clip 30V Asymmetric Dual N-Channel MOSFETFeatures General DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a dual package. The switch node has been internally connected to Max rDS(on) = 5.0 m at VGS = 10 V, ID = 17 Aenable easy placement and routing of synchronous buck Max rDS(on) = 6.5 m at VGS = 4
fdpc5030sg.pdf
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Otros transistores... FDP5N50 , FDP75N08 , FDP79N15 , FDP8441F085 , FDP8442 , FDP8443 , FDP8878 , FDP8N50NZU , IRFB3607 , FDPC5030SG , FDPF12N35 , FDPF12N50NZT , FDPF14N30T , FDPF15N65YDTU , FDPF18N20F , FDPF52N20T , FDPF79N15 .
History: HFP2N60U | INJ0002AU1 | STS8C6H3LL | VBM1680 | INK0001BC1 | IPP50R250CP | NDD60N745U1
History: HFP2N60U | INJ0002AU1 | STS8C6H3LL | VBM1680 | INK0001BC1 | IPP50R250CP | NDD60N745U1
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