FDPC5018SG MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDPC5018SG

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 23 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 56 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 2 nS

Cossⓘ - Capacitancia de salida: 397 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.005 Ohm

Encapsulados: POWERCLIP5X6

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FDPC5018SG datasheet

 ..1. Size:578K  fairchild semi
 fdpc5018sg.pdf pdf_icon

FDPC5018SG

May 2015 FDPC5018SG PowerTrench Power Clip 30V Asymmetric Dual N-Channel MOSFET Features General Description Q1 N-Channel This device includes two specialized N-Channel MOSFETs in a dual package. The switch node has been internally connected to Max rDS(on) = 5.0 m at VGS = 10 V, ID = 17 A enable easy placement and routing of synchronous buck Max rDS(on) = 6.5 m at VGS = 4

 8.1. Size:560K  fairchild semi
 fdpc5030sg.pdf pdf_icon

FDPC5018SG

May 2015 FDPC5030SG PowerTrench Power Clip 30V Asymmetric Dual N-Channel MOSFET Features General Description Q1 N-Channel This device includes two specialized N-Channel MOSFETs in a dual package. The switch node has been internally connected to Max rDS(on) = 5.0 m at VGS = 10 V, ID = 17 A enable easy placement and routing of synchronous buck Max rDS(on) = 6.5 m at VGS = 4

 8.2. Size:531K  onsemi
 fdpc5030sg.pdf pdf_icon

FDPC5018SG

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Otros transistores... FDP5N50, FDP75N08, FDP79N15, FDP8441F085, FDP8442, FDP8443, FDP8878, FDP8N50NZU, IRFB3607, FDPC5030SG, FDPF12N35, FDPF12N50NZT, FDPF14N30T, FDPF15N65YDTU, FDPF18N20F, FDPF52N20T, FDPF79N15