FDPC5018SG
MOSFET. Datasheet pdf. Equivalent
Type Designator: FDPC5018SG
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 23
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 56
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 62
nC
trⓘ - Rise Time: 2
nS
Cossⓘ -
Output Capacitance: 397
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.005
Ohm
Package: POWERCLIP5X6
FDPC5018SG
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDPC5018SG
Datasheet (PDF)
..1. Size:578K fairchild semi
fdpc5018sg.pdf
May 2015FDPC5018SGPowerTrench Power Clip 30V Asymmetric Dual N-Channel MOSFETFeatures General DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a dual package. The switch node has been internally connected to Max rDS(on) = 5.0 m at VGS = 10 V, ID = 17 Aenable easy placement and routing of synchronous buck Max rDS(on) = 6.5 m at VGS = 4
8.1. Size:560K fairchild semi
fdpc5030sg.pdf
May 2015FDPC5030SGPowerTrench Power Clip 30V Asymmetric Dual N-Channel MOSFETFeatures General DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a dual package. The switch node has been internally connected to Max rDS(on) = 5.0 m at VGS = 10 V, ID = 17 Aenable easy placement and routing of synchronous buck Max rDS(on) = 6.5 m at VGS = 4
8.2. Size:531K onsemi
fdpc5030sg.pdf
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