FDPF12N50NZT MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDPF12N50NZT

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 42 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V

|Id|ⓘ - Corriente continua de drenaje: 11.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 50 nS

Cossⓘ - Capacitancia de salida: 155 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.52 Ohm

Encapsulados: TO-220F

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FDPF12N50NZT datasheet

 ..1. Size:370K  fairchild semi
 fdpf12n50nzt.pdf pdf_icon

FDPF12N50NZT

October 2010 UniFET-IITM FDP12N50NZ / FDPF12N50NZ N-Channel MOSFET 500V, 11.5A, 0.52 Features Description RDS(on) = 0.46 ( Typ. ) @ VGS = 10V, ID = 5.75A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( Typ. 23nC ) stripe, DMOS technology. Low Crss ( Typ. 14pF ) This advanced tech

 3.1. Size:377K  fairchild semi
 fdp12n50nz fdpf12n50nz.pdf pdf_icon

FDPF12N50NZT

October 2010 UniFET-IITM FDP12N50NZ / FDPF12N50NZ N-Channel MOSFET 500V, 11.5A, 0.52 Features Description RDS(on) = 0.46 ( Typ. ) @ VGS = 10V, ID = 5.75A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( Typ. 23nC ) stripe, DMOS technology. Low Crss ( Typ. 14pF ) This advanced tech

 3.2. Size:255K  inchange semiconductor
 fdpf12n50nz.pdf pdf_icon

FDPF12N50NZT

Isc N-Channel MOSFET Transistor FDPF12N50NZ FEATURES With TO-220F package Low input capacitance and gate charge Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-

 5.1. Size:446K  fairchild semi
 fdp12n50 fdpf12n50.pdf pdf_icon

FDPF12N50NZT

June 2007 UniFETTM FDP12N50 / FDPF12N50 tm N-Channel MOSFET 500V, 11.5A, 0.65 Features Description RDS(on) = 0.55 (Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( Typ. 22nC) stripe, DMOS technology. Low Crss ( Typ. 11pF) This advanced technology has be

MOSTRAR MÁS

Otros transistores... FDP8441F085, FDP8442, FDP8443, FDP8878, FDP8N50NZU, FDPC5018SG, FDPC5030SG, FDPF12N35, CS150N03A8, FDPF14N30T, FDPF15N65YDTU, FDPF18N20F, FDPF52N20T, FDPF79N15, FDPF7N50, FDPF7N50F, FDPF8N50NZT