FDPF12N50NZT - параметры транзистора MOSFET, его аналоги, datasheet

FDPF12N50NZT MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

   Наименование прибора: FDPF12N50NZT
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 42 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 25 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 11.5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 23 nC
   trⓘ - Время нарастания: 50 ns
   Cossⓘ - Выходная емкость: 155 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.52 Ohm
   Тип корпуса: TO-220F

Аналог (замена) для FDPF12N50NZT

FDPF12N50NZT Datasheet (PDF)

..1. Size:370K fairchild semi
fdpf12n50nzt.pdf

October 2010UniFET-IITMFDP12N50NZ / FDPF12N50NZN-Channel MOSFET 500V, 11.5A, 0.52Features Description RDS(on) = 0.46 ( Typ. ) @ VGS = 10V, ID = 5.75A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 23nC )stripe, DMOS technology. Low Crss ( Typ. 14pF )This advanced tech

3.1. Size:377K fairchild semi
fdp12n50nz fdpf12n50nz.pdf

3.2. Size:255K inchange semiconductor
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Isc N-Channel MOSFET Transistor FDPF12N50NZFEATURESWith TO-220F packageLow input capacitance and gate chargeReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-

5.1. Size:446K fairchild semi
fdp12n50 fdpf12n50.pdf

June 2007UniFETTMFDP12N50 / FDPF12N50tmN-Channel MOSFET 500V, 11.5A, 0.65Features Description RDS(on) = 0.55 (Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 22nC) stripe, DMOS technology. Low Crss ( Typ. 11pF)This advanced technology has be

5.2. Size:695K fairchild semi
fdp12n50f fdpf12n50ft.pdf

December 2007UniFETTMFDP12N50F / FDPF12N50FTtmN-Channel MOSFET 500V, 11.5A, 0.7Features Description RDS(on) = 0.59 ( Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( Typ. 21nC)DMOS technology. Low Crss ( Typ. 11pF)This advance technolog

5.3. Size:646K fairchild semi
fdp12n50u fdpf12n50ut.pdf

November 2007Ultra FRFETTMFDP12N50U / FDPF12N50UTtmN-Channel MOSFET, FRFET 500V, 10A, 0.8Features Description RDS(on) = 0.65 ( Typ.)@ VGS = 10V, ID = 5A These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( Typ. 21nC)DMOS technology. Low Crss ( Typ. 11pF)This advance

5.4. Size:535K fairchild semi
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May 2012UniFETTMFDP12N50 / FDPF12N50TtmN-Channel MOSFET 500V, 11.5A, 0.65Features Description RDS(on) = 0.55 (Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 22nC) stripe, DMOS technology. Low Crss ( Typ. 11pF)This advanced technology has be

5.5. Size:680K onsemi
fdpf12n50ft.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

5.6. Size:694K onsemi
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