FDPF79N15 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

April 2007 TMUniFETFDP79N15 / FDPF79N15 150V N-Channel MOSFETFeatures Description 79A, 150V, RDS(on) = 0.03 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 56 nC) transistors are produced using Fairchilds proprietary, planar Low Crss ( typical 96pF) stripe, DMOS technology. Fast switchingThis advanced technology ha

April 2007TMUniFETFDP7N50/FDPF7N50 500V N-Channel MOSFETFeatures Description 7A, 500V, RDS(on) = 0.9 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 12.8 nC)stripe, DMOS technology. Low Crss ( typical 9 pF)This advanced technology has been especially tailo

March 2007TMUniFETFDP7N50/FDPF7N50 500V N-Channel MOSFETFeatures Description 7A, 500V, RDS(on) = 0.9 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 12.8 nC)stripe, DMOS technology. Low Crss ( typical 9 pF)This advanced technology has been especially tailo

November 2013FDPF7N50U / FDPF7N50U_G N-Channel UniFETTM Ultra FRFETTM MOSFET 500 V, 5 A, 1.5 Features Description RDS(on) = 1.5 (Max.) @ VGS = 10 V, ID = 2.5 A UniFETTM MOSFET is Fairchild Semiconductors high voltage MOSFET family based on planar stripe and DMOS technology. This Low Gate Charge (Typ. 12.8 nC)MOSFET is tailored to reduce on-state resistance, and

September 2010UniFET-II TMFDP7N60NZ / FDPF7N60NZN-Channel MOSFET600V, 6.5A, 1.25Features Description RDS(on) = 1.05 ( Typ.)@ VGS = 10V, ID = 3.25A These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( Typ. 13nC)DOMS technology. Low Crss ( Typ. 7pF)This advance techn

November 2007UniFETTMFDP7N50F / FDPF7N50FtmN-Channel MOSFET, FRFET500V, 6A, 1.15Features Description RDS(on) = 0.95 ( Typ.)@ VGS = 10V, ID = 3A These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( Typ. 15nC)DMOS technology. Low Crss ( Typ. 6.3pF)This advance technolo

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

November 2013FDPF7N50U / FDPF7N50U_G N-Channel UniFETTM Ultra FRFETTM MOSFET 500 V, 5 A, 1.5 Features Description RDS(on) = 1.5 (Max.) @ VGS = 10 V, ID = 2.5 A UniFETTM MOSFET is Fairchild Semiconductors high voltage MOSFET family based on planar stripe and DMOS technology. This Low Gate Charge (Typ. 12.8 nC)MOSFET is tailored to reduce on-state resistance, and

isc N-Channel MOSFET Transistor FDPF770N15AFEATURESWith TO-220F packagingDrain Source Voltage-: V 150VDSSStatic drain-source on-resistance:RDS(on) 77m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =2

isc N-Channel MOSFET Transistor FDPF7N60NZFEATURESDrain Current I = 6.5A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 1.25(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp