FDPF79N15 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: FDPF79N15
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 38 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 150 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 79 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 200 ns
Cossⓘ - Выходная емкость: 730 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.03 Ohm
Тип корпуса: TO-220F
FDPF79N15 Datasheet (PDF)
fdp79n15 fdpf79n15.pdf

April 2007 TMUniFETFDP79N15 / FDPF79N15 150V N-Channel MOSFETFeatures Description 79A, 150V, RDS(on) = 0.03 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 56 nC) transistors are produced using Fairchilds proprietary, planar Low Crss ( typical 96pF) stripe, DMOS technology. Fast switchingThis advanced technology ha
fdp7n50 fdpf7n50.pdf

April 2007TMUniFETFDP7N50/FDPF7N50 500V N-Channel MOSFETFeatures Description 7A, 500V, RDS(on) = 0.9 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 12.8 nC)stripe, DMOS technology. Low Crss ( typical 9 pF)This advanced technology has been especially tailo
fdpf7n50 fdpf7n50f.pdf

March 2007TMUniFETFDP7N50/FDPF7N50 500V N-Channel MOSFETFeatures Description 7A, 500V, RDS(on) = 0.9 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 12.8 nC)stripe, DMOS technology. Low Crss ( typical 9 pF)This advanced technology has been especially tailo
fdpf7n50u.pdf

November 2013FDPF7N50U / FDPF7N50U_G N-Channel UniFETTM Ultra FRFETTM MOSFET 500 V, 5 A, 1.5 Features Description RDS(on) = 1.5 (Max.) @ VGS = 10 V, ID = 2.5 A UniFETTM MOSFET is Fairchild Semiconductors high voltage MOSFET family based on planar stripe and DMOS technology. This Low Gate Charge (Typ. 12.8 nC)MOSFET is tailored to reduce on-state resistance, and
Другие MOSFET... FDPC5018SG , FDPC5030SG , FDPF12N35 , FDPF12N50NZT , FDPF14N30T , FDPF15N65YDTU , FDPF18N20F , FDPF52N20T , IRFZ24N , FDPF7N50 , FDPF7N50F , FDPF8N50NZT , FDR6580 , FDR6674A , FDR840P , FDR842P , FDR844P .



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