FDS3680 Todos los transistores

 8.1. Size:274K  fairchild semi
 fds3682.pdf

September 2002 FDS3682 N-Channel PowerTrench MOSFET 100V, 6A, 35m Features Applications rDS(ON) = 30m (Typ.), VGS = 10V, ID = 6A DC/DC converters and Off-Line UPS Qg(tot) = 19nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Synchronous Rectifie

 9.1. Size:89K  fairchild semi
 fds3601.pdf

August 2001 FDS3601 100V Dual N-Channel PowerTrench MOSFET General Description Features These N-Channel MOSFETs have been designed 1.3 A, 100 V. RDS(ON) = 480 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 530 m @ VGS = 6 V converters using either synchronous or conventional switching PWM controllers. Fast switching spe

 9.2. Size:277K  fairchild semi
 fds3692.pdf

September 2002 FDS3692 N-Channel PowerTrench MOSFET 100V, 4.5A, 60m Features Applications rDS(ON) = 50m (Typ.), VGS = 10V, ID = 4.5A DC/DC converters and Off-Line UPS Qg(tot) = 11nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Synchronous Rect

 9.3. Size:205K  fairchild semi
 fds3670.pdf

January 2000 PRELIMINARY FDS3670 100V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 6.3 A, 100 V. RDS(ON) = 0.030 @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 0.033 @ VGS = 6 V. converters using either synchronous or conventional switching PWM controllers. Low gate charge (57 nC typ

 9.4. Size:266K  fairchild semi
 fds3672.pdf

March 2003 FDS3672 N-Channel PowerTrench MOSFET 100V, 7.5A, 22m Features Applications rDS(ON) = 19m (Typ.), VGS = 10V, ID = 7.5A DC/DC converters and Off-Line UPS Qg(tot) = 28nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Synchronous Rectifie

 9.5. Size:88K  fairchild semi
 fds3612.pdf

March 2001 FDS3612 100V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 3.4 A, 100 V. RDS(ON) = 120 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 130 m @ VGS = 6 V converters using either synchronous or conventional switching PWM controllers. Fast switching spe

 9.6. Size:361K  onsemi
 fds3672.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.7. Size:827K  cn vbsemi
 fds3672.pdf

FDS3672 www.VBsemi.tw N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.040 at VGS = 10 V 6.4 Extremely Low Qgd for Switching Losses 100 23 nC 0.047 at VGS = 8 V 5.5 100 % Rg Tested 100 % Avalanche Tested Compliant to RoHS Directive 2002/95/EC D APPLICATIONS SO-8