All MOSFET. FDS3680 Datasheet

 

FDS3680 Datasheet and Replacement


   Type Designator: FDS3680
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8.5 nS
   Cossⓘ - Output Capacitance: 176 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.043 Ohm
   Package: SO-8
 

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FDS3680 Datasheet (PDF)

 8.1. Size:274K  fairchild semi
fds3682.pdf pdf_icon

FDS3680

September 2002FDS3682N-Channel PowerTrench MOSFET100V, 6A, 35mFeatures Applications rDS(ON) = 30m (Typ.), VGS = 10V, ID = 6A DC/DC converters and Off-Line UPS Qg(tot) = 19nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Synchronous Rectifie

 9.1. Size:89K  fairchild semi
fds3601.pdf pdf_icon

FDS3680

August 2001FDS3601100V Dual N-Channel PowerTrench MOSFETGeneral Description FeaturesThese N-Channel MOSFETs have been designed 1.3 A, 100 V. RDS(ON) = 480 m @ VGS = 10 Vspecifically to improve the overall efficiency of DC/DCRDS(ON) = 530 m @ VGS = 6 Vconverters using either synchronous or conventionalswitching PWM controllers. Fast switching spe

 9.2. Size:277K  fairchild semi
fds3692.pdf pdf_icon

FDS3680

September 2002FDS3692N-Channel PowerTrench MOSFET100V, 4.5A, 60mFeatures Applications rDS(ON) = 50m (Typ.), VGS = 10V, ID = 4.5A DC/DC converters and Off-Line UPS Qg(tot) = 11nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Synchronous Rect

 9.3. Size:205K  fairchild semi
fds3670.pdf pdf_icon

FDS3680

January 2000PRELIMINARYFDS3670100V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 6.3 A, 100 V. RDS(ON) = 0.030 @ VGS = 10 Vspecifically to improve the overall efficiency of DC/DCRDS(ON) = 0.033 @ VGS = 6 V.converters using either synchronous or conventionalswitching PWM controllers. Low gate charge (57 nC typ

Datasheet: FDR844P , FDS2070N3 , FDS2070N7 , FDS2170N3 , FDS2170N7 , FDS3170N7 , FDS3612 , FDS3670 , IRF2807 , FDS3682 , FDS4070N3 , FDS4070N7 , FDS4072N3 , FDS4072N7 , FDS4080N3 , FDS4080N7 , FDS4410A .

History: GP1M005A040XG | SSM3J36FS | AO4423-L | SFB049N80BI3 | AM7101P | IPT019N08N5 | SM4286T9RL

Keywords - FDS3680 MOSFET datasheet

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