FDS4070N3 Todos los transistores

 

FDS4070N3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDS4070N3
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 15.3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 600 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0075 Ohm
   Paquete / Cubierta: SO-8
 

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FDS4070N3 Datasheet (PDF)

 ..1. Size:171K  fairchild semi
 fds4070n3.pdf pdf_icon

FDS4070N3

February 2004 FDS4070N3 40V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 15.3 A, 40 V. RDS(ON) = 7.5 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional High performance trench technology for extremely switching PWM controllers. It has been

 6.1. Size:185K  fairchild semi
 fds4070n7.pdf pdf_icon

FDS4070N3

January 2004 FDS4070N7 40V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 15.3 A, 40 V. RDS(ON) = 7 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional High performance trench technology for extremely switching PWM controllers. It has been opt

 8.1. Size:176K  fairchild semi
 fds4072n7.pdf pdf_icon

FDS4070N3

February 2004 FDS4072N7 40V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 12.4 A, 40 V RDS(ON) = 11 m @ VGS = 4.5 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 9 m @ VGS = 10 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for High

 8.2. Size:168K  fairchild semi
 fds4072n3.pdf pdf_icon

FDS4070N3

February 2004 FDS4072N3 40V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 12.4 A, 40 V RDS(ON) = 12 m @ VGS = 4.5 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 10 m @ VGS = 10 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for Hig

MOSTRAR MÁS

Otros transistores... FDS2070N7 , FDS2170N3 , FDS2170N7 , FDS3170N7 , FDS3612 , FDS3670 , FDS3680 , FDS3682 , IRF830 , FDS4070N7 , FDS4072N3 , FDS4072N7 , FDS4080N3 , FDS4080N7 , FDS4410A , FDS4770 , FDS4780 .

History: AP6680SGYT-HF | STL7N80K5 | QM6020P | SFF130 | EMB12P03V | PTP10N40B | FDPF7N50

 

 
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