Справочник MOSFET. FDS4070N3

 

FDS4070N3 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FDS4070N3
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 3 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 15.3 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 47 nC
   trⓘ - Время нарастания: 12 ns
   Cossⓘ - Выходная емкость: 600 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0075 Ohm
   Тип корпуса: SO-8

 Аналог (замена) для FDS4070N3

 

 

FDS4070N3 Datasheet (PDF)

 ..1. Size:171K  fairchild semi
 fds4070n3.pdf

FDS4070N3 FDS4070N3

February 2004 FDS4070N3 40V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 15.3 A, 40 V. RDS(ON) = 7.5 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional High performance trench technology for extremely switching PWM controllers. It has been

 6.1. Size:185K  fairchild semi
 fds4070n7.pdf

FDS4070N3 FDS4070N3

January 2004 FDS4070N7 40V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 15.3 A, 40 V. RDS(ON) = 7 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional High performance trench technology for extremely switching PWM controllers. It has been opt

 8.1. Size:176K  fairchild semi
 fds4072n7.pdf

FDS4070N3 FDS4070N3

February 2004 FDS4072N7 40V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 12.4 A, 40 V RDS(ON) = 11 m @ VGS = 4.5 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 9 m @ VGS = 10 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for High

 8.2. Size:168K  fairchild semi
 fds4072n3.pdf

FDS4070N3 FDS4070N3

February 2004 FDS4072N3 40V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 12.4 A, 40 V RDS(ON) = 12 m @ VGS = 4.5 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 10 m @ VGS = 10 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for Hig

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History: AUIRLS3114Z

 

 
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