FDS6299S Todos los transistores

 

FDS6299S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDS6299S
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 21 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 1030 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0039 Ohm
   Paquete / Cubierta: SO-8
 

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FDS6299S Datasheet (PDF)

 ..1. Size:598K  fairchild semi
fds6299s.pdf pdf_icon

FDS6299S

November 2007tmFDS6299S 30V N-Channel PowerTrench SyncFET General Description Features The FDS6299S is designed to replace a single SO-8 21 A, 30 V. RDS(ON) = 3.9 m @ VGS = 10 V MOSFET and Schottky diode in synchronous DC:DC RDS(ON) = 5.1 m @ VGS = 4.5 V power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low

 8.1. Size:367K  fairchild semi
fds6294.pdf pdf_icon

FDS6299S

February 2007tmFDS6294 30V N-Channel Fast Switching PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 13 A, 30 V. RDS(ON) = 11.3 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 14.4 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers.

 8.2. Size:353K  fairchild semi
fds6298.pdf pdf_icon

FDS6299S

April 2007FDS6298 tm30V N-Channel Fast Switching PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 13 A, 30 V. RDS(ON) = 9 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 12 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers. It has been

 8.3. Size:140K  onsemi
fds6294.pdf pdf_icon

FDS6299S

November 2003FDS629430V N-Channel Fast Switching PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 13 A, 30 V. RDS(ON) = 11.3 m @ VGS = 10 Vspecifically to improve the overall efficiency of DC/DC RDS(ON) = 14.4 m @ VGS = 4.5 Vconverters using either synchronous or conventionalswitching PWM controllers. It has been optimized for

Otros transistores... FDS4780 , FDS5170N7 , FDS5682 , FDS5692Z , FDS6064N3 , FDS6064N7 , FDS6162N3 , FDS6162N7 , IRF9640 , FDS6572A , FDS6609A , FDS6672A , FDS6673AZ , FDS6675A , FDS6679Z , FDS6680S , FDS6688 .

History: AP60SL650AFI | NCE50NF330D | RU30E60M2

 

 
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