FDS6299S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

November 2007tmFDS6299S 30V N-Channel PowerTrench SyncFET General Description Features The FDS6299S is designed to replace a single SO-8 21 A, 30 V. RDS(ON) = 3.9 m @ VGS = 10 V MOSFET and Schottky diode in synchronous DC:DC RDS(ON) = 5.1 m @ VGS = 4.5 V power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low

February 2007tmFDS6294 30V N-Channel Fast Switching PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 13 A, 30 V. RDS(ON) = 11.3 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 14.4 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers.

April 2007FDS6298 tm30V N-Channel Fast Switching PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 13 A, 30 V. RDS(ON) = 9 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 12 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers. It has been

November 2003FDS629430V N-Channel Fast Switching PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 13 A, 30 V. RDS(ON) = 11.3 m @ VGS = 10 Vspecifically to improve the overall efficiency of DC/DC RDS(ON) = 14.4 m @ VGS = 4.5 Vconverters using either synchronous or conventionalswitching PWM controllers. It has been optimized for

FDS6298 30V N-Channel Fast Switching PowerTrench MOSFET Features General Description 13 A, 30 V. RDS(ON) = 9 m @ VGS = 10 V This N-Channel MOSFET has been designed RDS(ON) = 12 m @ VGS = 4.5 V specifically to improve the overall efficiency of DC/DC Low gate charge (10nC @ VGS=5V) converters using either synchronous or conventional switching PWM contro