FDS6299S Specs and Replacement

Type Designator: FDS6299S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 21 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 1030 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0039 Ohm

Package: SO-8

FDS6299S substitution

- MOSFET ⓘ Cross-Reference Search

 

FDS6299S datasheet

 ..1. Size:598K  fairchild semi
 fds6299s.pdf pdf_icon

FDS6299S

November 2007 tm FDS6299S 30V N-Channel PowerTrench SyncFET General Description Features The FDS6299S is designed to replace a single SO-8 21 A, 30 V. RDS(ON) = 3.9 m @ VGS = 10 V MOSFET and Schottky diode in synchronous DC DC RDS(ON) = 5.1 m @ VGS = 4.5 V power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low ... See More ⇒

 8.1. Size:367K  fairchild semi
 fds6294.pdf pdf_icon

FDS6299S

February 2007 tm FDS6294 30V N-Channel Fast Switching PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 13 A, 30 V. RDS(ON) = 11.3 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 14.4 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers. ... See More ⇒

 8.2. Size:353K  fairchild semi
 fds6298.pdf pdf_icon

FDS6299S

April 2007 FDS6298 tm 30V N-Channel Fast Switching PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 13 A, 30 V. RDS(ON) = 9 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 12 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers. It has been ... See More ⇒

 8.3. Size:140K  onsemi
 fds6294.pdf pdf_icon

FDS6299S

November 2003 FDS6294 30V N-Channel Fast Switching PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 13 A, 30 V. RDS(ON) = 11.3 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 14.4 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for ... See More ⇒

SHOW MORE

Detailed specifications: FDS4780, FDS5170N7, FDS5682, FDS5692Z, FDS6064N3, FDS6064N7, FDS6162N3, FDS6162N7, K2611, FDS6572A, FDS6609A, FDS6672A, FDS6673AZ, FDS6675A, FDS6679Z, FDS6680S, FDS6688

Keywords - FDS6299S MOSFET specs

 FDS6299S cross reference

 FDS6299S equivalent finder

 FDS6299S pdf lookup

 FDS6299S substitution

 FDS6299S replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility