FDS6673AZ MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDS6673AZ

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V

|Id|ⓘ - Corriente continua de drenaje: 14.5 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 8 nS

Cossⓘ - Capacitancia de salida: 1190 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0072 Ohm

Encapsulados: SO-8

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FDS6673AZ datasheet

 ..1. Size:130K  fairchild semi
fds6673az.pdf pdf_icon

FDS6673AZ

 7.1. Size:226K  fairchild semi
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FDS6673AZ

March 2009 FDS6673BZ P-Channel PowerTrench MOSFET -30V, -14.5A, 7.8m General Description Features This P-Channel MOSFET is produced using Fairchild Max rDS(on) = 7.8m , VGS = -10V, ID = -14.5A Semiconductor s advanced Power Trench process that Max rDS(on) = 12m , VGS = -4.5V, ID = -12A has been especially tailored to minimize the on-state Extended VGS range (-25V) for b

 7.2. Size:600K  fairchild semi
fds6673bz f085.pdf pdf_icon

FDS6673AZ

July 2009 FDS6673BZ_F085 P-Channel PowerTrench MOSFET -30V, -14.5A, 7.8m General Description Features This P-Channel MOSFET is produced using Fairchild Max rDS(on) = 7.8m , VGS = -10V, ID = -14.5A Semiconductor s advanced Power Trench process that Max rDS(on) = 12m , VGS = -4.5V, ID = -12A has been especially tailored to minimize the on-state Extended VGS range (-25V)

 7.3. Size:285K  onsemi
fds6673bz.pdf pdf_icon

FDS6673AZ

FDS6673BZ P-Channel PowerTrench MOSFET -30V, -14.5A, 7.8m Features General Description Max rDS(on) = 7.8m , VGS = -10V, ID = -14.5A This P-Channel MOSFET is produced using ON Semiconductor s advanced Power Trench process that Max rDS(on) = 12m , VGS = -4.5V, ID = -12A has been especially tailored to minimize the on-state Extended VGS range (-25V) for battery applicatio

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