FDS6673AZ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

April 2005FDS6673AZ30 Volt P-Channel PowerTrench MOSFETFeatures General Description 14.5 A, 30 V. RDS(ON) = 7.2 m @ VGS = 10 V This P-Channel MOSFET has been designed specifically toRDS(ON) = 11 m @ VGS = 4.5 V improve the overall efficiency of DC/DC converters using eithersynchronous or conventional switching PWM controllers, and Extended VGSS range (

March 2009FDS6673BZP-Channel PowerTrench MOSFET -30V, -14.5A, 7.8mGeneral Description FeaturesThis P-Channel MOSFET is produced using Fairchild Max rDS(on) = 7.8m, VGS = -10V, ID = -14.5A Semiconductors advanced Power Trench process that Max rDS(on) = 12m, VGS = -4.5V, ID = -12Ahas been especially tailored to minimize the on-state Extended VGS range (-25V) for b

July 2009FDS6673BZ_F085 P-Channel PowerTrench MOSFET -30V, -14.5A, 7.8mGeneral Description FeaturesThis P-Channel MOSFET is produced using Fairchild Max rDS(on) = 7.8m, VGS = -10V, ID = -14.5A Semiconductors advanced Power Trench process that Max rDS(on) = 12m, VGS = -4.5V, ID = -12Ahas been especially tailored to minimize the on-state Extended VGS range (-25V)

FDS6673BZP-Channel PowerTrench MOSFET -30V, -14.5A, 7.8mFeaturesGeneral Description Max rDS(on) = 7.8m, VGS = -10V, ID = -14.5AThis P-Channel MOSFET is produced using ON Semiconductors advanced Power Trench process that Max rDS(on) = 12m, VGS = -4.5V, ID = -12Ahas been especially tailored to minimize the on-state Extended VGS range (-25V) for battery applicatio

FDS6673BZwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d Qg (Typ.) TrenchFET Power MOSFET0.011 at VGS = - 10 V - 13.5 100 % Rg TestedRoHS- 30 29.5 nCCOMPLIANT 100 % UIS Tested0.015 at VGS = - 4.5 V - 11.6APPLICATIONS Load Switch Notebook Adaptor SwitchSO-8 S S1 8 DS D2 7G