FDS6673AZ MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDS6673AZ
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.5 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V
|Id|ⓘ - Corriente continua de drenaje: 14.5 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 8 nS
Cossⓘ - Capacitancia de salida: 1190 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0072 Ohm
Encapsulados: SO-8
Búsqueda de reemplazo de FDS6673AZ MOSFET
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FDS6673AZ datasheet
fds6673bz.pdf
March 2009 FDS6673BZ P-Channel PowerTrench MOSFET -30V, -14.5A, 7.8m General Description Features This P-Channel MOSFET is produced using Fairchild Max rDS(on) = 7.8m , VGS = -10V, ID = -14.5A Semiconductor s advanced Power Trench process that Max rDS(on) = 12m , VGS = -4.5V, ID = -12A has been especially tailored to minimize the on-state Extended VGS range (-25V) for b
fds6673bz f085.pdf
July 2009 FDS6673BZ_F085 P-Channel PowerTrench MOSFET -30V, -14.5A, 7.8m General Description Features This P-Channel MOSFET is produced using Fairchild Max rDS(on) = 7.8m , VGS = -10V, ID = -14.5A Semiconductor s advanced Power Trench process that Max rDS(on) = 12m , VGS = -4.5V, ID = -12A has been especially tailored to minimize the on-state Extended VGS range (-25V)
fds6673bz.pdf
FDS6673BZ P-Channel PowerTrench MOSFET -30V, -14.5A, 7.8m Features General Description Max rDS(on) = 7.8m , VGS = -10V, ID = -14.5A This P-Channel MOSFET is produced using ON Semiconductor s advanced Power Trench process that Max rDS(on) = 12m , VGS = -4.5V, ID = -12A has been especially tailored to minimize the on-state Extended VGS range (-25V) for battery applicatio
Otros transistores... FDS6064N3, FDS6064N7, FDS6162N3, FDS6162N7, FDS6299S, FDS6572A, FDS6609A, FDS6672A, AOD4184A, FDS6675A, FDS6679Z, FDS6680S, FDS6688, FDS6688AS, FDS6688S, FDS6694, FDS7060N7
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