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FDS6673AZ MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FDS6673AZ
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 2.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 25 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 14.5 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 8 ns
   Cossⓘ - Выходная емкость: 1190 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0072 Ohm
   Тип корпуса: SO-8

 Аналог (замена) для FDS6673AZ

 

 

FDS6673AZ Datasheet (PDF)

 ..1. Size:130K  fairchild semi
 fds6673az.pdf

FDS6673AZ FDS6673AZ

April 2005FDS6673AZ30 Volt P-Channel PowerTrench MOSFETFeatures General Description 14.5 A, 30 V. RDS(ON) = 7.2 m @ VGS = 10 V This P-Channel MOSFET has been designed specifically toRDS(ON) = 11 m @ VGS = 4.5 V improve the overall efficiency of DC/DC converters using eithersynchronous or conventional switching PWM controllers, and Extended VGSS range (

 7.1. Size:226K  fairchild semi
 fds6673bz.pdf

FDS6673AZ FDS6673AZ

March 2009FDS6673BZP-Channel PowerTrench MOSFET -30V, -14.5A, 7.8mGeneral Description FeaturesThis P-Channel MOSFET is produced using Fairchild Max rDS(on) = 7.8m, VGS = -10V, ID = -14.5A Semiconductors advanced Power Trench process that Max rDS(on) = 12m, VGS = -4.5V, ID = -12Ahas been especially tailored to minimize the on-state Extended VGS range (-25V) for b

 7.2. Size:600K  fairchild semi
 fds6673bz f085.pdf

FDS6673AZ FDS6673AZ

July 2009FDS6673BZ_F085 P-Channel PowerTrench MOSFET -30V, -14.5A, 7.8mGeneral Description FeaturesThis P-Channel MOSFET is produced using Fairchild Max rDS(on) = 7.8m, VGS = -10V, ID = -14.5A Semiconductors advanced Power Trench process that Max rDS(on) = 12m, VGS = -4.5V, ID = -12Ahas been especially tailored to minimize the on-state Extended VGS range (-25V)

 7.3. Size:285K  onsemi
 fds6673bz.pdf

FDS6673AZ FDS6673AZ

FDS6673BZP-Channel PowerTrench MOSFET -30V, -14.5A, 7.8mFeaturesGeneral Description Max rDS(on) = 7.8m, VGS = -10V, ID = -14.5AThis P-Channel MOSFET is produced using ON Semiconductors advanced Power Trench process that Max rDS(on) = 12m, VGS = -4.5V, ID = -12Ahas been especially tailored to minimize the on-state Extended VGS range (-25V) for battery applicatio

 7.4. Size:812K  cn vbsemi
 fds6673bz.pdf

FDS6673AZ FDS6673AZ

FDS6673BZwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d Qg (Typ.) TrenchFET Power MOSFET0.011 at VGS = - 10 V - 13.5 100 % Rg TestedRoHS- 30 29.5 nCCOMPLIANT 100 % UIS Tested0.015 at VGS = - 4.5 V - 11.6APPLICATIONS Load Switch Notebook Adaptor SwitchSO-8 S S1 8 DS D2 7G

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