FDS6679Z MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDS6679Z

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 13 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 9 nS

Cossⓘ - Capacitancia de salida: 974 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm

Encapsulados: SO-8

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FDS6679Z datasheet

 ..1. Size:63K  fairchild semi
 fds6679z.pdf pdf_icon

FDS6679Z

October 2001 FDS6679Z 30 Volt P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET has been designed 13 A, 30 V. R = 9 m @ V = 10 V DS(ON) GS specifically to improve the overall efficiency of DC/DC R = 13 m @ V = 4.5 V DS(ON) GS converters using either synchronous or conventional switching PWM controllers, and battery charge

 7.1. Size:93K  fairchild semi
 fds6679.pdf pdf_icon

FDS6679Z

March 2005 FDS6679 30 Volt P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET has been designed 13 A, 30 V. RDS(ON) = 9 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 13 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers, and battery chargers.

 7.2. Size:479K  fairchild semi
 fds6679az.pdf pdf_icon

FDS6679Z

March 2009 FDS6679AZ tm P-Channel PowerTrench MOSFET -30V, -13A, 9m General Description Features This P-Channel MOSFET is producted using Fairchild Max rDS(on) = 9.3m at VGS = -10V, ID = -13A Semiconductor s advanced PowerTrench process that has Max rDS(on) = 14.8m at VGS = -4.5V, ID = -11A been especially tailored to minimize the on-state resistance. Extended VGS r

 7.3. Size:534K  onsemi
 fds6679az.pdf pdf_icon

FDS6679Z

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and oth

MOSTRAR MÁS

Otros transistores... FDS6162N3, FDS6162N7, FDS6299S, FDS6572A, FDS6609A, FDS6672A, FDS6673AZ, FDS6675A, 60N06, FDS6680S, FDS6688, FDS6688AS, FDS6688S, FDS6694, FDS7060N7, FDS7064N, FDS7064N7