FDS6679Z. Аналоги и основные параметры
Наименование производителя: FDS6679Z
Тип транзистора: MOSFET
Полярность: P
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 2.5 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 13 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
|VGSth|ⓘ - Пороговое напряжение включения: 3 V
tr ⓘ - Время нарастания: 9 ns
Cossⓘ - Выходная емкость: 974 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.009 Ohm
Тип корпуса: SO-8
Аналог (замена) для FDS6679Z
- подборⓘ MOSFET транзистора по параметрам
FDS6679Z даташит
fds6679z.pdf
October 2001 FDS6679Z 30 Volt P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET has been designed 13 A, 30 V. R = 9 m @ V = 10 V DS(ON) GS specifically to improve the overall efficiency of DC/DC R = 13 m @ V = 4.5 V DS(ON) GS converters using either synchronous or conventional switching PWM controllers, and battery charge
fds6679.pdf
March 2005 FDS6679 30 Volt P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET has been designed 13 A, 30 V. RDS(ON) = 9 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 13 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers, and battery chargers.
fds6679az.pdf
March 2009 FDS6679AZ tm P-Channel PowerTrench MOSFET -30V, -13A, 9m General Description Features This P-Channel MOSFET is producted using Fairchild Max rDS(on) = 9.3m at VGS = -10V, ID = -13A Semiconductor s advanced PowerTrench process that has Max rDS(on) = 14.8m at VGS = -4.5V, ID = -11A been especially tailored to minimize the on-state resistance. Extended VGS r
fds6679az.pdf
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